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SPP20N60CFD PDF预览

SPP20N60CFD

更新时间: 2024-11-14 22:42:47
品牌 Logo 应用领域
英飞凌 - INFINEON 晶体晶体管功率场效应晶体管开关脉冲局域网
页数 文件大小 规格书
12页 166K
描述
Cool MOS⑩ Power Transistor

SPP20N60CFD 技术参数

是否无铅:不含铅是否Rohs认证:符合
生命周期:Obsolete零件包装代码:TO-220AB
包装说明:GREEN, PLASTIC, TO-220, 3 PIN针数:3
Reach Compliance Code:compliant风险等级:2.19
Is Samacsys:N其他特性:AVALANCHE RATED
雪崩能效等级(Eas):690 mJ配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:600 V最大漏极电流 (Abs) (ID):20.7 A
最大漏极电流 (ID):20.7 A最大漏源导通电阻:0.22 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:TO-220AB
JESD-30 代码:R-PSFM-T3JESD-609代码:e3
元件数量:1端子数量:3
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):260
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):208 W
最大脉冲漏极电流 (IDM):52 A认证状态:Not Qualified
子类别:FET General Purpose Power表面贴装:NO
端子面层:MATTE TIN端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

SPP20N60CFD 数据手册

 浏览型号SPP20N60CFD的Datasheet PDF文件第2页浏览型号SPP20N60CFD的Datasheet PDF文件第3页浏览型号SPP20N60CFD的Datasheet PDF文件第4页浏览型号SPP20N60CFD的Datasheet PDF文件第5页浏览型号SPP20N60CFD的Datasheet PDF文件第6页浏览型号SPP20N60CFD的Datasheet PDF文件第7页 
SPP20N60CFD  
Cool MOS™ Power Transistor  
Feature  
V
@ T  
650  
0.22  
20.7  
V
W
A
DS  
jmax  
R
DS(on)  
· New revolutionary high voltage technology  
I
D
· Worldwide best R  
in TO 220  
DS(on)  
P-TO220-3-1  
· Ultra low gate charge  
· Periodic avalanche rated  
· Extreme dv/dt rated  
· High peak current capability  
· Intrinsic fast-recovery body diode  
· Extreme low reverse recovery charge  
Type  
Package  
Ordering Code  
Marking  
SPP20N60CFD  
P-TO220-3-1 Q67040-S4616  
20N60CFD  
Maximum Ratings  
Parameter  
Symbol  
Value  
Unit  
A
Continuous drain current  
I
D
T = 25 °C  
20.7  
13.1  
52  
C
T = 100 °C  
C
Pulsed drain current, t limited by T  
I
D puls  
p
jmax  
690  
mJ  
Avalanche energy, single pulse  
E
E
I
AS  
I = 10 A, V = 50 V  
D
DD  
1)  
1
Avalanche energy, repetitive t limited by T  
AR  
jmax  
jmax  
AR  
I = 20 A, V = 50 V  
D
DD  
20  
40  
A
Avalanche current, repetitive t limited by T  
AR  
AR  
Reverse diode dv/dt  
dv/dt  
V/ns  
I =20.7A, V =480V, T =125°C  
S
DS  
j
V
Gate source voltage  
V
±20  
±30  
GS  
Gate source voltage AC (f >1Hz)  
V
GS  
208  
W
Power dissipation, T = 25°C  
P
C
tot  
°C  
Operating and storage temperature  
T , T  
-55... +150  
j
stg  
Page 1  
2003-12-22  

SPP20N60CFD 替代型号

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New revolutionary high voltage technology Worldwide best RDS(on) in TO 220