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SPW20N60C3 PDF预览

SPW20N60C3

更新时间: 2024-11-22 22:21:27
品牌 Logo 应用领域
英飞凌 - INFINEON 晶体晶体管
页数 文件大小 规格书
12页 259K
描述
Cool MOS™ Power Transistor

SPW20N60C3 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Not Recommended零件包装代码:TO-247AD
包装说明:GREEN, PLASTIC, TO-247, 3 PIN针数:3
Reach Compliance Code:compliantFactory Lead Time:1 week
风险等级:7.84其他特性:AVALANCHE RATED
雪崩能效等级(Eas):690 mJ配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:600 V最大漏极电流 (Abs) (ID):20.7 A
最大漏极电流 (ID):20.7 A最大漏源导通电阻:0.19 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:TO-247AD
JESD-30 代码:R-PSFM-T3JESD-609代码:e3
元件数量:1端子数量:3
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):208 W
最大脉冲漏极电流 (IDM):62.1 A认证状态:Not Qualified
子类别:FET General Purpose Power表面贴装:NO
端子面层:Matte Tin (Sn)端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管元件材料:SILICONBase Number Matches:1

SPW20N60C3 数据手册

 浏览型号SPW20N60C3的Datasheet PDF文件第2页浏览型号SPW20N60C3的Datasheet PDF文件第3页浏览型号SPW20N60C3的Datasheet PDF文件第4页浏览型号SPW20N60C3的Datasheet PDF文件第5页浏览型号SPW20N60C3的Datasheet PDF文件第6页浏览型号SPW20N60C3的Datasheet PDF文件第7页 
SPW20N60C3  
Final data  
Cool MOS™ Power Transistor  
Feature  
New revolutionary high voltage technology  
Ultra low gate charge  
Periodic avalanche rated  
Extreme dv/dt rated  
V
@ T  
650  
0.19  
20.7  
V
A
DS  
jmax  
R
DS(on)  
I
D
P-TO247  
High peak current capability  
Improved transconductance  
Type  
SPW20N60C3  
Package  
P-TO247  
Ordering Code  
Q67040-S4406  
Marking  
20N60C3  
Maximum Ratings  
Parameter  
Symbol  
Value  
Unit  
A
Continuous drain current  
I
D
T = 25 °C  
20.7  
13.1  
62.1  
690  
C
T = 100 °C  
C
Pulsed drain current, t limited by T  
Avalanche energy, single pulse  
I
E
p
jmax  
D puls  
mJ  
AS  
I = 10 A, V = 50 V  
Avalanche energy, repetitive t limited by T  
D
DD  
1)  
jmax  
E
1
AR  
AR  
I = 20 A, V = 50 V  
D
DD  
20  
6
A
V/ns  
Avalanche current, repetitive t limited by T  
Reverse diode dv/dt  
I
jmax AR  
AR  
dv/dt  
I =20.7A, V =480V, T =125°C  
S
DS  
j
Gate source voltage static  
V
V
P
V
±20  
±30  
208  
GS  
GS  
tot  
Gate source voltage AC (f >1Hz)  
Power dissipation, T = 25°C  
Operating and storage temperature  
W
°C  
C
T , T  
-55... +150  
j
stg  
Page 1  
2003-09-17  

SPW20N60C3 替代型号

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