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SPW47N60C3 PDF预览

SPW47N60C3

更新时间: 2024-11-14 22:14:47
品牌 Logo 应用领域
英飞凌 - INFINEON 晶体晶体管脉冲PC局域网
页数 文件大小 规格书
13页 243K
描述
Cool MOS™ Power Transistor

SPW47N60C3 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Not Recommended零件包装代码:TO-247AC
包装说明:FLANGE MOUNT, R-PSFM-T3针数:3
Reach Compliance Code:compliant风险等级:7.84
Samacsys Confidence:3Samacsys Status:Released
Samacsys PartID:167916Samacsys Pin Count:3
Samacsys Part Category:MOSFET (N-Channel)Samacsys Package Category:Transistor Outline, Vertical
Samacsys Footprint Name:pg-to-247Samacsys Released Date:2020-05-11 05:30:31
Is Samacsys:N其他特性:AVALANCHE RATED
雪崩能效等级(Eas):1800 mJ配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:600 V最大漏极电流 (Abs) (ID):47 A
最大漏极电流 (ID):47 A最大漏源导通电阻:0.07 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:TO-247AC
JESD-30 代码:R-PSFM-T3元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):415 W最大脉冲漏极电流 (IDM):141 A
认证状态:Not Qualified子类别:FET General Purpose Power
表面贴装:NO端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管元件材料:SILICONBase Number Matches:1

SPW47N60C3 数据手册

 浏览型号SPW47N60C3的Datasheet PDF文件第2页浏览型号SPW47N60C3的Datasheet PDF文件第3页浏览型号SPW47N60C3的Datasheet PDF文件第4页浏览型号SPW47N60C3的Datasheet PDF文件第5页浏览型号SPW47N60C3的Datasheet PDF文件第6页浏览型号SPW47N60C3的Datasheet PDF文件第7页 
SPW47N60C3  
Cool MOS™ Power Transistor  
Feature  
New revolutionary high voltage technology  
V
@ T  
650  
0.07  
47  
V
A
DS  
jmax  
R
DS(on)  
I
D
Worldwide best R  
in TO 247  
DS(on)  
P-TO247  
Ultra low gate charge  
Periodic avalanche rated  
Extreme dv/dt rated  
Ultra low effective capacitances  
Type  
Package  
Ordering Code  
Marking  
SPW47N60C3  
P-TO247  
Q67040-S4491  
47N60C3  
Maximum Ratings  
Parameter  
Symbol  
Value  
Unit  
A
Continuous drain current  
I
D
T = 25 °C  
47  
30  
C
T = 100 °C  
C
141  
1800  
Pulsed drain current, t limited by T  
Avalanche energy, single pulse  
I
E
p
jmax  
D puls  
mJ  
AS  
I = 10 A, V = 50 V  
Avalanche energy, repetitive t limited by T  
D
DD  
1)  
jmax  
E
1
AR  
AR  
I = 20 A, V = 50 V  
D
DD  
20  
A
V
Avalanche current, repetitive t limited by T  
Gate source voltage static  
I
V
AR  
jmax AR  
±20  
±30  
415  
GS  
V
P
Gate source voltage AC (f >1Hz)  
GS  
tot  
W
°C  
Power dissipation, T = 25°C  
C
Operating and storage temperature  
T , T  
-55... +150  
j
stg  
Page 1  
2003-11-06  

SPW47N60C3 替代型号

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