RFP30N06LE

更新时间： 2024-11-22 21:54:03

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		/
页数	文件大小	规格书
8页	186K
描述
30A, 60V, ESD Rated, 0.047 Ohm, Logic Level N-Channel Power MOSFETs

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替代型号

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RFP30N06LE 数据手册

RFP30N06LE, RF1S30N06LESM

Data Sheet

January 2004

30A, 60V, ESD Rated, 0.047 Ohm, Logic

Level N-Channel Power MOSFETs

Features

• 30A, 60V

These are N-Channel power MOSFETs manufactured using

the MegaFET process. This process, which uses feature

sizes approaching those of LSI integrated circuits gives

optimum utilization of silicon, resulting in outstanding

performance. They were designed for use in applications

such as switching regulators, switching converters, motor

drivers and relay drivers. These transistors can be operated

directly from integrated circuits.

• r

= 0.047Ω

• 2kV ESD Protected

DS(ON)

• Temperature Compensating PSPICE Model

• Peak Current vs Pulse Width Curve

• UIS Rating Curve

• Related Literature

These transistors incorporate ESD protection and are

designed to withstand 2kV (Human Body Model) of ESD.

- TB334 “Guidelines for Soldering Surface Mount

Components to PC Boards”

Formerly developmental type TA49027.

Symbol

Ordering Information

PART NUMBER

PACKAGE

TO-220AB

TO-263AB

BRAND

P30N06LE

1S30N06L

RFP30N06LE

RF1S30N06LESM

NOTE: When ordering use the entire part number. Add suffix, 9A, to

obtain the TO-263 variant in tape and reel i.e. RF1S30N06LESM9A.

Packaging

JEDEC TO-220AB

JEDEC TO-263AB

SOURCE

DRAIN

GATE

DRAIN

(FLANGE)

GATE

DRAIN (FLANGE)

SOURCE

RFP30N06LE, RF1S30N06LESM Rev. B1

12 3 4 5 6 7 8

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RFP30N06LE 替代型号

型号	品牌	替代类型	描述	数据表
RFP70N06	FAIRCHILD	类似代替	70A, 60V, Avalanche Rated, N-Channel Enhancement-Mode Power MOSFETs
RFP50N06	FAIRCHILD	类似代替	50A, 60V, 0.022 Ohm, N-Channel Power MOSFETs
RFP12N10L	FAIRCHILD	类似代替	12A, 100V, 0.200 Ohm, Logic Level, N-Channel Power MOSFET

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