Datasheet > RFP30P06

RFP30P06

更新时间： 2024-11-11 22:43:59

品牌	Logo	应用领域
英特矽尔 - INTERSIL		晶体晶体管开关局域网
页数	文件大小	规格书
8页	74K
描述
30A, 60V, 0.065 Ohm, P-Channel Power MOSFETs

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RFP30P06 数据手册

RFG30P06, RFP30P06, RF1S30P06SM

Data Sheet

July 1999

File Number 2437.3

30A, 60V, 0.065 Ohm, P-Channel Power

MOSFETs

Features

• 30A, 60V

These are P-Channel power MOSFETs manufactured using

the MegaFET process. This process, which uses feature

sizes approaching those of LSI circuits, gives optimum

utilization of silicon, resulting in outstanding performance.

They are designed for use in applications such as switching

regulators, switching converters, motor drivers, and relay

drivers. These transistors can be operated directly from

integrated circuits.

• r

= 0.065Ω

DS(ON)

• Temperature Compensating PSPICE Model

• Peak Current vs Pulse Width Curve

• UIS Rating Curve

• 175 C Operating Temperature

• Related Literature

Formerly developmental type TA09834.

- TB334 “Guidelines for Soldering Surface Mount

Components to PC Boards”

Ordering Information

Symbol

PART NUMBER

PACKAGE

BRAND

RFG30P06

TO-247

RFP30P06

TO-220AB

TO-263AB

RFP30P06

F1S30P06

RF1S30P06SM

NOTE: When ordering, use the entire part number. Add the suffix 9A

to obtain the TO-263AB variant in tape and reel, i.e. RF1S30P06SM9A.

Packaging

JEDEC STYLE TO-247

JEDEC TO-220AB

SOURCE

DRAIN

SOURCE

DRAIN

GATE

DRAIN

(BOTTOM

SIDE METAL)

DRAIN

(FLANGE)

JEDEC TO-263AB

DRAIN

(FLANGE)

GATE

SOURCE

CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.

PSPICE® is a registered trademark of MicroSim Corporation.

4-133

12 3 4 5 6 7 8

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