Datasheet > RFP3N50

RFP3N50

更新时间： 2024-11-22 22:14:31

品牌	Logo	应用领域
英特矽尔 - INTERSIL		/
页数	文件大小	规格书
10页	85K
描述
3A, 450V and 500V, 3 Ohm, N-Channel Power MOSFETs

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RFP3N50 数据手册

RFM3N45, RFM3N50, RFP3N45, RFP3N50

Semiconductor

Data Sheet

October 1998

File Number 1384.2

3A, 450V and 500V, 3 Ohm, N-Channel

Power MOSFETs

Features

• 3A, 450V and 500V

• r = 3Ω

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These are N-Channel enhancement mode silicon gate

power ﬁeld effect transistors designed for applications such

as switching regulators, switching converters, motor drivers,

relay drivers, and drivers for high power bipolar switching

transistors requiring high speed and low gate drive power.

These types can be operated directly from integrated

circuits.

DS(ON)

• Related Literature

- TB334 “Guidelines for Soldering Surface Mount

Components to PC Boards”

Symbol

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/DOCI

NFO

pdf-

Formerly developmental type TA17405.

Ordering Information

PART NUMBER

PACKAGE

BRAND

RFM3N45

TO-204AA

RFM3N50

TO-204AA

TO-220AB

RFM3N50

RFP3N45

RFP3N50

RFP3N45

RFP3N50

mark

NOTE: When ordering, use the entire part number.

[

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VIEW

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Packaging

JEDEC TO-204AA

JEDEC TO-220AB

SOURCE

DRAIN

GATE

DRAIN

(FLANGE)

DRAIN (FLANGE)

mark

SOURCE (PIN 2)

GATE (PIN 1)

CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.

12 3 4 5 6 7...10

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