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RFP3N45 PDF预览

RFP3N45

更新时间: 2024-09-23 22:14:31
品牌 Logo 应用领域
英特矽尔 - INTERSIL 晶体晶体管开关脉冲局域网
页数 文件大小 规格书
10页 85K
描述
3A, 450V and 500V, 3 Ohm, N-Channel Power MOSFETs

RFP3N45 数据手册

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RFM3N45, RFM3N50, RFP3N45, RFP3N50  
Semiconductor  
Data Sheet  
October 1998  
File Number 1384.2  
3A, 450V and 500V, 3 Ohm, N-Channel  
Power MOSFETs  
Features  
• 3A, 450V and 500V  
• r = 3  
[ /Title  
()  
/Sub-  
ject ()  
/Autho  
r ()  
These are N-Channel enhancement mode silicon gate  
power field effect transistors designed for applications such  
as switching regulators, switching converters, motor drivers,  
relay drivers, and drivers for high power bipolar switching  
transistors requiring high speed and low gate drive power.  
These types can be operated directly from integrated  
circuits.  
DS(ON)  
• Related Literature  
- TB334 “Guidelines for Soldering Surface Mount  
Components to PC Boards”  
Symbol  
/Key-  
words  
()  
/Cre-  
ator ()  
/DOCI  
NFO  
pdf-  
D
Formerly developmental type TA17405.  
Ordering Information  
G
PART NUMBER  
PACKAGE  
BRAND  
RFM3N45  
RFM3N45  
TO-204AA  
S
RFM3N50  
TO-204AA  
TO-220AB  
TO-220AB  
RFM3N50  
RFP3N45  
RFP3N50  
RFP3N45  
RFP3N50  
mark  
NOTE: When ordering, use the entire part number.  
[
/Page-  
Mode  
/Use-  
Out-  
lines  
/DOC-  
VIEW  
pdf-  
Packaging  
JEDEC TO-204AA  
JEDEC TO-220AB  
SOURCE  
DRAIN  
GATE  
DRAIN  
(FLANGE)  
DRAIN (FLANGE)  
mark  
SOURCE (PIN 2)  
GATE (PIN 1)  
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.  
1-800-4-HARRIS | Copyright © Harris Corporation 1998  
1

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Flanged Terminations