Datasheet > SPW24N60C3_08

SPW24N60C3_08

更新时间： 2024-09-30 09:08:27

品牌	Logo	应用领域
英飞凌 - INFINEON		晶体晶体管
页数	文件大小	规格书
12页	808K
描述
Cool MOS? Power Transistor

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中文翻译

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SPW24N60C3_08 数据手册

SPW24N60C3

Cool MOS™ Power Transistor

Feature

• New revolutionary high voltage technology

@ T

650

0.16

24.3

Ω

jmax

DS(on)

• Ultra low gate charge

PG-TO247

• Periodic avalanche rated

• Extreme dv/dt rated

• Ultra low effective capacitances

• Improved transconductance

Type

SPW24N60C3

Package

PG-TO247

Ordering Code

Q67040-S4640

Marking

24N60C3

Maximum Ratings

Parameter

Symbol

Value

Unit

Continuous drain current

T = 25 °C

24.3

15.4

72.9

780

T = 100 °C

Pulsed drain current, t limited by T

Avalanche energy, single pulse

jmax

uls

I = 10 A, V = 50 V

)

jmax

Avalanche energy, repetitive t limited by T

I = 24.3 A, V = 50 V

24.3

Avalanche current, repetitive t limited by T

Gate source voltage static

jmax AR

±20

240

Gate source voltage AC (f >1Hz)

tot

Power dissipation, T = 25°C

°C

V/ns

Operating and storage temperature

Reverse diode dv/dt

T , T

dv/dt

-55... +150

Page 1

Rev. 2.5

2008-02-11

Please note the new package dimensions arccording to PCN 2009-134-A

12 3 4 5 6 7...12

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