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SPW35N60C3FKSA1 PDF预览

SPW35N60C3FKSA1

更新时间: 2024-09-30 15:52:39
品牌 Logo 应用领域
英飞凌 - INFINEON 局域网高压开关脉冲晶体管
页数 文件大小 规格书
12页 760K
描述
Power Field-Effect Transistor, 34.6A I(D), 600V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AA, GREEN, PLASTIC, TO-247, 3 PIN

SPW35N60C3FKSA1 技术参数

是否无铅:不含铅是否Rohs认证:符合
生命周期:Not Recommended零件包装代码:TO-247AA
包装说明:FLANGE MOUNT, R-PSFM-T3针数:3
Reach Compliance Code:compliantFactory Lead Time:18 weeks
风险等级:8.51Is Samacsys:N
其他特性:AVALANCHE RATED, HIGH VOLTAGE雪崩能效等级(Eas):1500 mJ
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:600 V
最大漏极电流 (ID):34.6 A最大漏源导通电阻:0.1 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:TO-247AA
JESD-30 代码:R-PSFM-T3JESD-609代码:e3
元件数量:1端子数量:3
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL最大脉冲漏极电流 (IDM):103.8 A
认证状态:Not Qualified表面贴装:NO
端子面层:Tin (Sn)端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

SPW35N60C3FKSA1 数据手册

 浏览型号SPW35N60C3FKSA1的Datasheet PDF文件第2页浏览型号SPW35N60C3FKSA1的Datasheet PDF文件第3页浏览型号SPW35N60C3FKSA1的Datasheet PDF文件第4页浏览型号SPW35N60C3FKSA1的Datasheet PDF文件第5页浏览型号SPW35N60C3FKSA1的Datasheet PDF文件第6页浏览型号SPW35N60C3FKSA1的Datasheet PDF文件第7页 
SPW35N60C3  
CoolMOSTM Power Transistor  
Features  
Product Summary  
DS @ T j,max  
R DS(on),max  
I D  
V
650  
0.1  
V
A
• New revolutionary high voltage technology  
• Ultra low gate charge  
34.6  
• Periodic avalanche rated  
• Extreme dv /dt rated  
• Ultra low effective capacitances  
• Improved transconductance  
PG-TO247  
Type  
Package  
Ordering Code Marking  
SPW35N60C3  
PG-TO247  
Q67040-S4673  
35N60C3  
Maximum ratings, at T j=25 °C, unless otherwise specified  
Value  
Parameter  
Symbol Conditions  
Unit  
I D  
T C=25 °C  
T C=100 °C  
T C=25 °C  
34.6  
21.9  
103.8  
1500  
1.5  
Continuous drain current  
A
Pulsed drain current1)  
I D,pulse  
E AS  
E AR  
I AR  
I D=17.3 A, V DD=50 V  
I D=34.6 A, V DD=50 V  
Avalanche energy, single pulse  
mJ  
1),2)  
1)  
Avalanche energy, repetitive t AR  
34.6  
A
Avalanche current, repetitive t AR  
Drain source voltage slope  
Gate source voltage  
I D=34.6 A,  
50  
dv /dt  
V/ns  
V
V
DS=480 V, T j=125 °C  
V GS  
±20  
±30  
static  
V GS  
AC (f >1 Hz)  
T C=25 °C  
P tot  
313  
Power dissipation  
W
T j, T stg  
dv/dt  
-55 ... 150  
15  
Operating and storage temperature  
°C  
6)  
Reverse diode dv/dt  
V/ns  
Rev. 2.5  
Page 1  
2008-02-11  
Please note the new package dimensions arccording to PCN 2009-134-A  

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