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SPW47N60C2 PDF预览

SPW47N60C2

更新时间: 2024-11-14 22:14:47
品牌 Logo 应用领域
英飞凌 - INFINEON 晶体晶体管脉冲局域网
页数 文件大小 规格书
11页 123K
描述
Cool MOS⑩ Power Transistor

SPW47N60C2 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:TO-247包装说明:PLASTIC, TO-247, 3 PIN
针数:3Reach Compliance Code:compliant
风险等级:5.42Is Samacsys:N
其他特性:AVALANCHE RATED雪崩能效等级(Eas):1800 mJ
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:600 V
最大漏极电流 (Abs) (ID):47 A最大漏极电流 (ID):47 A
最大漏源导通电阻:0.07 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:TO-247JESD-30 代码:R-PSFM-T3
JESD-609代码:e0元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):415 W最大脉冲漏极电流 (IDM):94 A
认证状态:Not Qualified子类别:FET General Purpose Power
表面贴装:NO端子面层:Tin/Lead (Sn/Pb)
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管元件材料:SILICON
Base Number Matches:1

SPW47N60C2 数据手册

 浏览型号SPW47N60C2的Datasheet PDF文件第2页浏览型号SPW47N60C2的Datasheet PDF文件第3页浏览型号SPW47N60C2的Datasheet PDF文件第4页浏览型号SPW47N60C2的Datasheet PDF文件第5页浏览型号SPW47N60C2的Datasheet PDF文件第6页浏览型号SPW47N60C2的Datasheet PDF文件第7页 
SPW47N60C2  
Final data  
Cool MOS™ Power Transistor  
Feature  
Product Summary  
New revolutionary high voltage technology  
V
V
600  
0.07  
47  
DS  
Worldwide best R  
in TO 247  
DS(on)  
R
DS(on)  
Ultra low gate charge  
A
I
D
Periodic avalanche rated  
Extreme dv/dt rated  
P-TO247  
Ultra low effective capacitances  
Improved noise immunity  
Type  
Package  
Ordering Code  
Marking  
SPW47N60C2  
P-TO247  
Q67040-S4323  
47N60C2  
Maximum Ratings, at T = 25°C, unless otherwise specified  
C
Parameter  
Symbol  
Value  
Unit  
A
Continuous drain current  
I
D
T = 25 °C  
47  
30  
C
T = 100 °C  
C
94  
Pulsed drain current, t limited by T  
I
D puls  
p
jmax  
1800  
mJ  
Avalanche energy, single pulse  
E
AS  
I =10A, V =50V  
D
DD  
1)  
1
Avalanche energy, repetitive t limited by T  
E
AR  
jmax  
AR  
I =20A, V =50V  
D
DD  
20  
6
A
Avalanche current, repetitive t limited by T  
I
AR  
AR  
jmax  
Reverse diode dv/dt  
dv/dt  
V/ns  
I =47A, V  
DS  
< V , di/dt=100A/µs, T =150°C  
DD jmax  
S
V
Gate source voltage  
Power dissipation, T = 25°C  
V
P
±20  
415  
GS  
tot  
W
°C  
C
Operating and storage temperature  
T , T  
-55... +150  
j
stg  
Page 1  
2002-10-07  

SPW47N60C2 替代型号

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