Datasheet > SPW35N60C3_05

SPW35N60C3_05

更新时间： 2024-09-30 09:08:27

品牌	Logo	应用领域
英飞凌 - INFINEON		晶体晶体管
页数	文件大小	规格书
11页	451K
描述
CoolMOSTM Power Transistor

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中文翻译

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数据手册

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SPW35N60C3_05 数据手册

SPW35N60C3

CoolMOS^TMPower Transistor

Features

Product Summary

_DS@ T _j,max

R _DS(on),max

I _D

650

0.1

Ω

• New revolutionary high voltage technology

• Ultra low gate charge

34.6

• Periodic avalanche rated

• Extreme dv /dt rated

• Ultra low effective capacitances

• Improved transconductance

PG-TO247

Type

Package

Ordering Code Marking

SPW35N60C3

PG-TO247

Q67040-S4673

35N60C3

Maximum ratings, at T _j=25 °C, unless otherwise specified

Value

Parameter

Symbol Conditions

Unit

I _D

T _C=25 °C

T _C=100 °C

T _C=25 °C

34.6

21.9

103.8

1500

1.5

Continuous drain current

Pulsed drain current¹⁾

I _D,pulse

E _AS

E _AR

I _AR

I _D=17.3 A, V _DD=50 V

I _D=34.6 A, V _DD=50 V

Avalanche energy, single pulse

1),2)

Avalanche energy, repetitive t _AR

34.6

Avalanche current, repetitive t _AR

Drain source voltage slope

Gate source voltage

I _D=34.6 A,

dv /dt

V/ns

_DS=480 V, T _j=125 °C

V _GS

±20

±30

static

V _GS

AC (f >1 Hz)

T _C=25 °C

P _tot

313

Power dissipation

T _j, T _stg

dv/dt

-55 ... 150

Operating and storage temperature

°C

Reverse diode dv/dt

V/ns

Rev. 2.4

Page 1

2005-09-21

12 3 4 5 6 7...11

中文翻译

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