是否无铅: | 不含铅 | 是否Rohs认证: | 符合 |
生命周期: | Obsolete | 零件包装代码: | TO-247AC |
包装说明: | FLANGE MOUNT, R-PSFM-T3 | 针数: | 3 |
Reach Compliance Code: | compliant | 风险等级: | 5.78 |
Is Samacsys: | N | 其他特性: | AVALANCHE RATED |
雪崩能效等级(Eas): | 690 mJ | 配置: | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压: | 500 V | 最大漏极电流 (Abs) (ID): | 21 A |
最大漏极电流 (ID): | 21 A | 最大漏源导通电阻: | 0.19 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JEDEC-95代码: | TO-247AC |
JESD-30 代码: | R-PSFM-T3 | 元件数量: | 1 |
端子数量: | 3 | 工作模式: | ENHANCEMENT MODE |
最高工作温度: | 150 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | FLANGE MOUNT |
峰值回流温度(摄氏度): | NOT SPECIFIED | 极性/信道类型: | N-CHANNEL |
最大功率耗散 (Abs): | 208 W | 最大脉冲漏极电流 (IDM): | 63 A |
认证状态: | Not Qualified | 子类别: | FET General Purpose Power |
表面贴装: | NO | 端子形式: | THROUGH-HOLE |
端子位置: | SINGLE | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 替代类型 | 描述 | 数据表 |
SPB21N50C3 | INFINEON |
类似代替 |
Cool MOS⑩ Power Transistor | |
SPI21N50C3 | INFINEON |
类似代替 |
Cool MOS⑩ Power Transistor |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
SPW21N50C3_08 | INFINEON |
获取价格 |
Cool MOS Power Transistor | |
SPW24N60C3 | INFINEON |
获取价格 |
CoolMOS Power Transistor | |
SPW24N60C3_08 | INFINEON |
获取价格 |
Cool MOS? Power Transistor | |
SPW24N60CFD | INFINEON |
获取价格 |
CoolMOS Power Transistor | |
SPW24N60CFDFKSA1 | INFINEON |
获取价格 |
Power Field-Effect Transistor, 21.7A I(D), 600V, 0.185ohm, 1-Element, N-Channel, Silicon, | |
SPW31002D | SECOS |
获取价格 |
Bipolar Tone Ringer ICS | |
SPW31002S | SECOS |
获取价格 |
Bipolar Tone Ringer ICs | |
SPW32N50C3 | INFINEON |
获取价格 |
Cool MOS⑩ Power Transistor | |
SPW32N50C3_08 | INFINEON |
获取价格 |
Cool MOS? Power Transistor | |
SPW32N50C3FKSA1 | INFINEON |
获取价格 |
Power Field-Effect Transistor, 32A I(D), 500V, 0.11ohm, 1-Element, N-Channel, Silicon, Met |