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SPP20N60CFD_05 PDF预览

SPP20N60CFD_05

更新时间: 2024-09-28 06:13:27
品牌 Logo 应用领域
英飞凌 - INFINEON 晶体晶体管
页数 文件大小 规格书
12页 352K
描述
Cool MOS™ Power Transistor Feature New revolutionary high voltage technology

SPP20N60CFD_05 数据手册

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SPP20N60CFD  
Cool MOS™ Power Transistor  
Feature  
V
@ T  
650  
0.22  
20.7  
V
A
DS  
jmax  
R
DS(on)  
New revolutionary high voltage technology  
I
D
Worldwide best R  
in TO 220  
DS(on)  
PG-TO220  
Ultra low gate charge  
Periodic avalanche rated  
Extreme dv/dt rated  
High peak current capability  
Intrinsic fast-recovery body diode  
Extreme low reverse recovery charge  
Type  
Package  
Ordering Code  
Marking  
SPP20N60CFD  
PG-TO220  
Q67040-S4616  
20N60CFD  
Maximum Ratings  
Parameter  
Symbol  
Value  
Unit  
A
Continuous drain current  
I
D
T = 25 °C  
20.7  
13.1  
52  
C
T = 100 °C  
C
Pulsed drain current, t limited by T  
I
D puls  
p
jmax  
690  
mJ  
Avalanche energy, single pulse  
E
E
I
AS  
I = 10 A, V = 50 V  
D
DD  
1)  
1
Avalanche energy, repetitive t limited by T  
AR  
jmax  
jmax  
AR  
I = 20 A, V = 50 V  
D
DD  
20  
40  
A
Avalanche current, repetitive t limited by T  
AR  
AR  
Reverse diode dv/dt  
dv/dt  
V/ns  
V
I =20.7A, V =480V, T =125°C  
S
DS  
j
Gate source voltage  
V
20  
30  
GS  
Gate source voltage AC (f >1Hz)  
V
GS  
208  
W
Power dissipation, T = 25°C  
P
C
tot  
°C  
Operating and storage temperature  
T , T  
-55... +150  
j
stg  
Rev. 2.4  
Page 1  
2005-06-09  

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