Datasheet > SPP20N60S5_09

SPP20N60S5_09

更新时间： 2024-09-15 09:08:51

品牌	Logo	应用领域
英飞凌 - INFINEON		晶体晶体管
页数	文件大小	规格书
11页	371K
描述
Cool MOS? Power Transistor

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中文翻译

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SPP20N60S5_09 数据手册

SPP20N60S5

Cool MOS™ Power Transistor

Feature

• New revolutionary high voltage technology

600

0.19

Ω

DS(on)

• Worldwide best R

in TO 220

DS(on)

PG-TO220

• Ultra low gate charge

• Periodic avalanche rated

• Extreme dv/dt rated

• Ultra low effective capacitances

• Improved transconductance

P-TO220-3-1

Type

Package

Ordering Code

Marking

20N60S5

SPP20N60S5

PG-TO220

Q67040-S4751

Maximum Ratings

Parameter

Symbol

Value

Unit

Continuous drain current

T = 25 °C

T = 100 °C

Pulsed drain current, t limited by T

jmax

D puls

690

Avalanche energy, single pulse

I = 10 A, V = 50 V

jmax

Avalanche energy, repetitive t limited by T

I = 20 A, V = 50 V

Avalanche current, repetitive t limited by T

Gate source voltage

jmax AR

±20

208

Gate source voltage AC (f >1Hz)

tot

Power dissipation, T = 25°C

°C

Operating and storage temperature

T , T

-55... +150

stg

Page 1

Rev. 2.8

2009-12-01

12 3 4 5 6 7...11

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