Datasheet > SPP2303S23RG

SPP2303S23RG

更新时间： 2024-11-23 03:31:23

品牌	Logo	应用领域
擎力 - SYNC-POWER		/
页数	文件大小	规格书
8页	201K
描述
P-Channel Enhancement Mode MOSFET

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技术参数
数据手册

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SPP2303S23RG 技术参数

生命周期：	Contact Manufacturer	包装说明：	,
Reach Compliance Code：	compliant	风险等级：	5.58
Base Number Matches：	1

SPP2303S23RG 数据手册

SPP2303

P-Channel Enhancement Mode MOSFET

DESCRIPTION

APPLICATIONS

Power Management in Note book

The SPP2303 is the P-Channel logic enhancement mode

power field effect transistors are produced using high cell

density , DMOS trench technology.

This high density process is especially tailored to

minimize on-state resistance.

These devices are particularly suited for low voltage

application such as cellular phone and notebook

computer power management and other battery powered

circuits, and low in-line power loss are needed in a very

small outline surface mount package.

Portable Equipment

Battery Powered System

DC/DC Converter

Load Switch

DSC

LCD Display inverter

FEATURES

PIN CONFIGURATION(SOT-23-3L)

-30V/-2.6A,RDS(ON)=130mΩ@VGS=- 10V

-30V/-2.0A,RDS(ON)=180mΩ@VGS=-4.5V

Super high density cell design for extremely low

R^{DS (ON)}

Exceptional on-resistance and maximum DC

current capability

SOT-23-3L package design

PART MARKING

2007/02/20 Ver.5

Page 1

12 3 4 5 6 7 8

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