Datasheet > SPP2301S23RG

SPP2301S23RG

更新时间： 2024-11-26 03:31:23

品牌	Logo	应用领域
擎力 - SYNC-POWER		/
页数	文件大小	规格书
8页	220K
描述
P-Channel Enhancement Mode MOSFET

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中文翻译

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技术参数
数据手册

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SPP2301S23RG 技术参数

是否Rohs认证：	符合	生命周期：	Contact Manufacturer
包装说明：	,	Reach Compliance Code：	compliant
风险等级：	5.75	配置：	Single
最大漏极电流 (Abs) (ID)：	3 A	FET 技术：	METAL-OXIDE SEMICONDUCTOR
最高工作温度：	150 °C	极性/信道类型：	P-CHANNEL
最大功率耗散 (Abs)：	1.25 W	子类别：	Other Transistors
表面贴装：	YES	Base Number Matches：	1

SPP2301S23RG 数据手册

SPP2301

P-Channel Enhancement Mode MOSFET

DESCRIPTION

APPLICATIONS

Power Management in Note book

The SPP2301 is the P-Channel logic enhancement mode

power field effect transistors are produced using high cell

density , DMOS trench technology.

This high density process is especially tailored to

minimize on-state resistance.

These devices are particularly suited for low voltage

application such as cellular phone and notebook

computer power management and other battery powered

circuits, and low in-line power loss are needed in a very

small outline surface mount package.

Portable Equipment

Battery Powered System

DC/DC Converter

Load Switch

DSC

LCD Display inverter

FEATURES

PIN CONFIGURATION(SOT-23-3L)

-20V/-2.8A,RDS(ON)=120mΩ@VGS=-4.5V

-20V/-2.0A,RDS(ON)=170mΩ@VGS=-2.5V

Super high density cell design for extremely low

R^{DS (ON)}

Exceptional on-resistance and maximum DC

current capability

SOT-23-3L package design

PART MARKING

2007/02/02 Ver.3

Page 1

12 3 4 5 6 7 8

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