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SPP2301S23RG PDF预览

SPP2301S23RG

更新时间: 2024-11-05 03:31:23
品牌 Logo 应用领域
擎力 - SYNC-POWER /
页数 文件大小 规格书
8页 220K
描述
P-Channel Enhancement Mode MOSFET

SPP2301S23RG 技术参数

是否Rohs认证: 符合生命周期:Contact Manufacturer
包装说明:,Reach Compliance Code:compliant
风险等级:5.75配置:Single
最大漏极电流 (Abs) (ID):3 AFET 技术:METAL-OXIDE SEMICONDUCTOR
最高工作温度:150 °C极性/信道类型:P-CHANNEL
最大功率耗散 (Abs):1.25 W子类别:Other Transistors
表面贴装:YESBase Number Matches:1

SPP2301S23RG 数据手册

 浏览型号SPP2301S23RG的Datasheet PDF文件第2页浏览型号SPP2301S23RG的Datasheet PDF文件第3页浏览型号SPP2301S23RG的Datasheet PDF文件第4页浏览型号SPP2301S23RG的Datasheet PDF文件第5页浏览型号SPP2301S23RG的Datasheet PDF文件第6页浏览型号SPP2301S23RG的Datasheet PDF文件第7页 
SPP2301  
P-Channel Enhancement Mode MOSFET  
DESCRIPTION  
APPLICATIONS  
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Power Management in Note book  
The SPP2301 is the P-Channel logic enhancement mode  
power field effect transistors are produced using high cell  
density , DMOS trench technology.  
This high density process is especially tailored to  
minimize on-state resistance.  
These devices are particularly suited for low voltage  
application such as cellular phone and notebook  
computer power management and other battery powered  
circuits, and low in-line power loss are needed in a very  
small outline surface mount package.  
Portable Equipment  
Battery Powered System  
DC/DC Converter  
Load Switch  
DSC  
LCD Display inverter  
FEATURES  
PIN CONFIGURATION(SOT-23-3L)  
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‹
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-20V/-2.8A,RDS(ON)=120m@VGS=-4.5V  
-20V/-2.0A,RDS(ON)=170m@VGS=-2.5V  
Super high density cell design for extremely low  
RDS (ON)  
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Exceptional on-resistance and maximum DC  
current capability  
SOT-23-3L package design  
PART MARKING  
2007/02/02 Ver.3  
Page 1  

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