是否Rohs认证: | 符合 | 生命周期: | Active |
包装说明: | FLANGE MOUNT, R-PSFM-T3 | Reach Compliance Code: | compliant |
风险等级: | 5.65 | 其他特性: | AVALANCHE RATED |
雪崩能效等级(Eas): | 690 mJ | 外壳连接: | DRAIN |
配置: | SINGLE WITH BUILT-IN DIODE | 最小漏源击穿电压: | 600 V |
最大漏极电流 (ID): | 20 A | 最大漏源导通电阻: | 0.19 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JEDEC-95代码: | TO-220AB |
JESD-30 代码: | R-PSFM-T3 | 元件数量: | 1 |
端子数量: | 3 | 工作模式: | ENHANCEMENT MODE |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | FLANGE MOUNT | 峰值回流温度(摄氏度): | NOT SPECIFIED |
极性/信道类型: | N-CHANNEL | 最大脉冲漏极电流 (IDM): | 40 A |
表面贴装: | NO | 端子形式: | THROUGH-HOLE |
端子位置: | SINGLE | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
SPP20N65C3 | INFINEON |
获取价格 |
Cool MOS⑩ Power Transistor | |
SPP20N65C3_07 | INFINEON |
获取价格 |
New revolutionary high voltage technology Worldwide best RDS(on) in TO 220 | |
SPP20N65C3_09 | INFINEON |
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New revolutionary high voltage technology Ultra low gate charge Extreme dv/dt rated | |
SPP20N65C3HKSA1 | INFINEON |
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Power Field-Effect Transistor, 20.7A I(D), 650V, 0.19ohm, 1-Element, N-Channel, Silicon, M | |
SPP20N65C3XKSA1 | INFINEON |
获取价格 |
Power Field-Effect Transistor, 20.7A I(D), 650V, 0.19ohm, 1-Element, N-Channel, Silicon, M | |
SPP21N10 | ROCHESTER |
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21A, 100V, 0.08ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN | |
SPP21N10 | INFINEON |
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SIPMOS Power-Transistor | |
SPP21N50C3 | INFINEON |
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Cool MOS⑩ Power Transistor | |
SPP21N50C3_07 | INFINEON |
获取价格 |
New revolutionary high voltage technology Worldwide best RDS(on) in TO 220 Ultra low gate | |
SPP21N50C3_09 | INFINEON |
获取价格 |
Cool MOS™ Power Transistor Feature New revolu |