Datasheet > SPP21N50C3_07

SPP21N50C3_07

更新时间： 2024-11-05 06:13:27

品牌	Logo	应用领域
英飞凌 - INFINEON		栅极
页数	文件大小	规格书
14页	876K
描述
New revolutionary high voltage technology Worldwide best RDS(on) in TO 220 Ultra low gate charge

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中文翻译

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SPP21N50C3_07 数据手册

SPP21N50C3

SPI21N50C3, SPA21N50C3

Cool MOS™ Power Transistor

Feature

• New revolutionary high voltage technology

@ T

560

0.19

Ω

jmax

DS(on)

• Worldwide best R

in TO 220

DS(on)

PG-TO220FP

P G-TO262 PG-TO220

• Ultra low gate charge

• Periodic avalanche rated

• Extreme dv/dt rated

• Ultra low effective capacitances

• Improved transconductance

Type

Package

Ordering Code

Marking

SPP21N50C3

PG-TO220

Q67040-S4565

21N50C3

SPI21N50C3

SPA21N50C3

PG-TO262

PG-TO220FP

Q67040-S4564

SP000216364

21N50C3

Maximum Ratings

Parameter

Symbol

Value

Unit

SPP_I

SPA

Continuous drain current

T = 25 °C

13.1

T = 100 °C

13.1

Pulsed drain current, t limited by T

D puls

jmax

Avalanche energy, single pulse

690

I =10A, V =50V

Avalanche energy, repetitive t limited by T

jmax

I =21A, V =50V

Avalanche current, repetitive t limited by T

Gate source voltage

±20

jmax

tot

Gate source voltage AC (f >1Hz)

Power dissipation, T = 25°C

208

34.5

Operating and storage temperature

dv/dt

-55...+150

°C

V/ns

stg

Reverse diode dv/dt ⁷⁾

Rev. 3.0

Page 1

2007-08-30

12 3 4 5 6 7...14

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