Datasheet > SPP2311S23RGB

SPP2311S23RGB

更新时间： 2024-09-16 12:48:51

品牌	Logo	应用领域
擎力 - SYNC-POWER		/
页数	文件大小	规格书
8页	209K
描述
P-Channel Enhancement Mode MOSFET

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SPP2311S23RGB 数据手册

SPP2311

P-Channel Enhancement Mode MOSFET

DESCRIPTION

APPLICATIONS



Drivers : Relays/Solenoids/Lamps/Hammers

Power Supply Converter Circuits

Load/Power Switching Cell Phones, Pagers

The SPP2311 is the P-Channel enhancement mode

power field effect transistors are produced using high cell

density , DMOS trench technology. This high density

process is especially tailored to minimize on-state

resistance and provide superior switching performance.

These devices are particularly suited for low voltage

applications such as notebook computer power

management and other battery powered circuits where

high-side switching , low in-line power loss, and

resistance to transients are needed.

FEATURES

PIN CONFIGURATION( SOT-23 )



P-Channel

-20V/0.45A,R^DS(ON)= 0.65Ω@VGS=-4.5V

-20V/0.35A,R^DS(ON)= 0.90Ω@VGS=-2.5V

-20V/0.25A,R^DS(ON)= 1.5Ω@VGS=-1.8V

-20V/0.25A,R^DS(ON)= 3.0Ω@VGS=-1.5V

Super high density cell design for extremely low

RDS (ON)

Exceptional on-resistance and maximum DC

current capability

SOT-23 package design



PART MARKING

2013/10/18 Ver.1

Page 1

12 3 4 5 6 7 8

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