Datasheet > SPP2301DS23RG

SPP2301DS23RG

更新时间： 2024-11-26 12:49:07

品牌	Logo	应用领域
擎力 - SYNC-POWER		/
页数	文件大小	规格书
8页	211K
描述
P-Channel Enhancement Mode MOSFET

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技术参数
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SPP2301DS23RG 技术参数

生命周期：	Contact Manufacturer	包装说明：	,
Reach Compliance Code：	compliant	风险等级：	5.61
Is Samacsys：	N	Base Number Matches：	1

SPP2301DS23RG 数据手册

SPP2301D

P-Channel Enhancement Mode MOSFET

DESCRIPTION

APPLICATIONS

Power Management in Note book

The SPP2301D is the P-Channel logic enhancement

mode power field effect transistors are produced using

high cell density , DMOS trench technology.

This high density process is especially tailored to

minimize on-state resistance.

These devices are particularly suited for low voltage

application such as cellular phone and notebook

computer power management and other battery powered

circuits, and low in-line power loss are needed in a very

small outline surface mount package.

Portable Equipment

Battery Powered System

DC/DC Converter

Load Switch

DSC

LCD Display inverter

FEATURES

PIN CONFIGURATION(SOT-23)

-20V/-2.4A,RDS(ON)=128mΩ@VGS=-4.5V

-20V/-2.0A,RDS(ON)=188mΩ@VGS=-2.5V

Super high density cell design for extremely low

R^{DS (ON)}

Exceptional on-resistance and maximum DC

current capability

SOT-23 package design

PART MARKING

2011/10/25 Ver.3

Page 1

12 3 4 5 6 7 8

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