Datasheet > SPP20N65C3_09

SPP20N65C3_09

更新时间： 2024-11-23 06:13:27

品牌	Logo	应用领域
英飞凌 - INFINEON		栅极
页数	文件大小	规格书
15页	611K
描述
New revolutionary high voltage technology Ultra low gate charge Extreme dv/dt rated

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中文翻译

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数据手册

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SPP20N65C3_09 数据手册

SPP20N65C3, SPA20N65C3

SPI20N65C3

Cool MOS™ Power Transistor

Feature

• New revolutionary high voltage technology

650

0.19

20.7

Ω

DS(on)

• Worldwide best R

in TO 220

DS(on)

PG-TO262

PG-TO220FP PG-TO220

• Ultra low gate charge

• Periodic avalanche rated

• Extreme dv/dt rated

• High peak current capability

• Improved transconductance

P-TO220-3-31

Type

Package

PG-TO220

PG-TO220FP SP000216362

PG-TO262

Ordering Code

Q67040-S4556

Marking

20N65C3

SPP20N65C3

SPA20N65C3

SPI20N65C3

Q67040-S4560

Maximum Ratings

Parameter

Symbol

Value

SPP_I

Unit

SPA

Continuous drain current

T = 25 °C

20.7

13.1

20.7

T = 100 °C

13.1

62.1

690

Pulsed drain current,

limited by

D puls

62.1

690

jmax

Avalanche energy, single pulse

I =3.5A, V =50V

Avalanche energy, repetitive

limited by

jmax

I =7A, V =50V

Avalanche current, repetitive

limited by

jmax

Gate source voltage

±20

208

±20

34.5

tot

Gate source voltage AC (f >1Hz)

Power dissipation, T = 25°C

Operating and storage temperature

-55...+150

°C

stg

Rev. 3.1

Page 1

2009-12-01

12 3 4 5 6 7...15

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