Datasheet > SPP20N60S5_01

SPP20N60S5_01

更新时间： 2024-09-15 03:31:23

品牌	Logo	应用领域
英飞凌 - INFINEON		晶体晶体管
页数	文件大小	规格书
9页	121K
描述
Cool MOS⑩ Power Transistor

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中文翻译

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SPP20N60S5_01 数据手册

SPP20N60S5

SPB20N60S5

Preliminary data

Cool MOS™=Power Transistor

•=New revolutionary high voltage technology

COOLMOS

Power Semiconductors

Product Summary

• Worldwide best R in TO 220

DS(on)

@ T

650

0.19

Ω

jmax

• Ultra low gate charge

DS(on)

•=Improved periodic avalanche rating

• Extreme dv/dt rated

P-TO263-3-2

P-TO220-3-1

•=Optimized capacitances

•=Improved noise immunity

•=Former development designation:

SPPx1N60S5/SPBx1N60S5

D,2

Type

Package

Ordering Code

Marking

20N60S5

P-TO220-3-1 Q67040-S4751

P-TO263-3-2 Q67040-S4171

SPP20N60S5

SPB20N60S5

G,1

S,3

Maximum Ratings,at T = 25 °C, unless otherwise specified

Parameter

Symbol

Value

Unit

Continuous drain current

T =25°C

T =100°C

Pulsed drain current ¹⁾

D puls

T =25°C

690

Avalanche energy, single pulse

I = 10 A, V = 50 V

Avalanche energy (repetitive, limited by T

)

jmax

I = 20 A, V = 50 V

Avalanche current (repetitive, limited by T

Reverse diode dv/dt

)

jmax

kV/µs

dv/dt

I =20A, V <V

DS DSS

, di/dt=100A/µs, T =150°C

jmax

Gate source voltage

Power dissipation

±20

tot

208

T =25°C

°C

Operating and storage temperature

T , T

-55... +150

stg

2001-07-25

12 3 4 5 6 7...9

中文翻译

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