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SPP04N80C3 PDF预览

SPP04N80C3

更新时间: 2024-11-14 22:16:27
品牌 Logo 应用领域
英飞凌 - INFINEON 晶体晶体管功率场效应晶体管开关脉冲高压PC局域网
页数 文件大小 规格书
12页 251K
描述
Cool MOS⑩ Power Transistor

SPP04N80C3 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:TO-220AB
包装说明:GREEN, PLASTIC, TO-220, 3 PIN针数:3
Reach Compliance Code:compliant风险等级:2.2
Samacsys Confidence:3Samacsys Status:Released
Samacsys PartID:423093Samacsys Pin Count:3
Samacsys Part Category:MOSFET (N-Channel)Samacsys Package Category:Transistor Outline, Vertical
Samacsys Footprint Name:PG-TO220-3+Samacsys Released Date:2020-03-29 02:52:26
Is Samacsys:N其他特性:AVALANCHE RATED, HIGH VOLTAGE
雪崩能效等级(Eas):170 mJ配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:800 V最大漏极电流 (Abs) (ID):4 A
最大漏极电流 (ID):4 A最大漏源导通电阻:1.3 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:TO-220AB
JESD-30 代码:R-PSFM-T3元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):63 W最大脉冲漏极电流 (IDM):12 A
认证状态:Not Qualified子类别:FET General Purpose Power
表面贴装:NO端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

SPP04N80C3 数据手册

 浏览型号SPP04N80C3的Datasheet PDF文件第2页浏览型号SPP04N80C3的Datasheet PDF文件第3页浏览型号SPP04N80C3的Datasheet PDF文件第4页浏览型号SPP04N80C3的Datasheet PDF文件第5页浏览型号SPP04N80C3的Datasheet PDF文件第6页浏览型号SPP04N80C3的Datasheet PDF文件第7页 
SPP04N80C3  
SPA04N80C3  
Final data  
Cool MOS™ Power Transistor  
V
800  
1.3  
4
V
A
DS  
Feature  
R
DS(on)  
I
New revolutionary high voltage technology  
Ultra low gate charge  
D
P-TO220-3-31 P-TO220-3-1  
Periodic avalanche rated  
Extreme dv/dt rated  
3
Ultra low effective capacitances  
Improved transconductance  
2
1
P-TO220-3-31  
P-TO-220-3-31: Fully isolated package (2500 VAC; 1 minute)  
Type  
Package  
Ordering Code  
Marking  
SPP04N80C3  
P-TO220-3-1 Q67040-S4433  
04N80C3  
SPA04N80C3  
P-TO220-3-31 Q67040-S4434  
04N80C3  
Maximum Ratings  
Parameter  
Symbol  
Value  
Unit  
SPP  
SPA  
Continuous drain current  
I
A
D
1)  
T = 25 °C  
4
2.5  
4
C
1)  
T = 100 °C  
2.5  
C
Pulsed drain current, t limited by T  
I
D puls  
12  
12  
A
p
jmax  
Avalanche energy, single pulse  
E
170  
170  
mJ  
AS  
I =0.8A, V =50V  
D
DD  
2)  
E
Avalanche energy, repetitive t limited by T  
0.1  
0.1  
AR  
AR  
jmax  
I =4A, V =50V  
D
DD  
Avalanche current, repetitive t limited by T  
Gate source voltage  
I
4
4
A
V
AR  
jmax  
AR  
V
V
P
±20  
±30  
63  
±20  
±30  
38  
GS  
GS  
tot  
Gate source voltage AC (f >1Hz)  
Power dissipation, T = 25°C  
W
C
Operating and storage temperature  
T , T  
-55...+150  
°C  
j
stg  
Page 1  
2003-07-02  

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