Datasheet > SPP07N65C3_10

SPP07N65C3_10

更新时间： 2024-02-21 13:26:38

品牌	Logo	应用领域
英飞凌 - INFINEON		晶体晶体管
页数	文件大小	规格书
15页	396K
描述
Cool MOS Power Transistor

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中文翻译

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数据手册

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SPP07N65C3_10 数据手册

SPP07N65C3, SPI07N65C3

SPA07N65C3

CoolMOS™ Power Transistor

Feature

• New revolutionary high voltage technology

• Ultra low gate charge

650

0.6

7.3

DS(on)

PG-TO220-3

PG-TO262-3-1 PG-TO220

• Periodic avalanche rated

• Extreme dv/dt rated

• High peak current capability

• Improved transconductance

P-TO220-3-31

P-TO220-3-1

• PG-TO-220-3 : Fully isolated package (2500 VAC; 1 minute)

Type

Package

Marking

SPP07N65C3

PG-TO220

07N65C3

SPI07N65C3

SPA07N65C3

PG-TO262-3

PG-TO220-3

Maximum Ratings

Parameter

Symbol

Value

Unit

SPP_I

SPA

Continuous drain current

T = 25 °C

7.3

4.6

7.3

T = 100 °C

4.6

Pulsed drain current,

limited by

D puls

21.9

230

21.9

230

jmax

Avalanche energy, single pulse

I =1.5A, V =50V

jmax

Avalanche energy, repetitive t limited by

0.5

I =2.5A, V =50V

Avalanche current, repetitive t limited by

Gate source voltage

2.5

jmax

tot

Gate source voltage AC (f >1Hz)

Power dissipation, T = 25°C

Operating and storage temperature

stg

-55...+150

°C

Page 1

Rev. 1.92

2010-12-21

12 3 4 5 6 7...15

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