Datasheet > SPP08P06P_09

SPP08P06P_09

更新时间： 2024-01-13 06:17:13

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
10页	331K
描述
P-Channel Enhancement mode Avalanche rated dv/dt rated

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SPP08P06P_09 数据手册

SPP08P06P G

SIPMOS Power-Transistor

Features

Product Summary

P-Channel

Drain source voltage

-60

0.3

Enhancement mode

Avalanche rated

dv/dt rated

Drain-source on-state resistance R

DS(on)

Continuous drain current

-8.8

175°C operating temperature

• Pb-free lead plating; RoHS compliant

Pin 1 PIN 2/4 PIN 3

Type

Package

SPP08P06P G

PG-TO220-3

Maximum Ratings,at T = 25 °C, unless otherwise specified

Parameter

Symbol

Value

Unit

Continuous drain current

T = 25 °C

-8.8

-6.2

T = 100 °C

Pulsed drain current

-35.2

D puls

T = 25 °C

Avalanche energy, single pulse

I = -8.8 A , V = -25 V, R = 25

Avalanche energy, periodic limited by T

4.2

jmax

Reverse diode dv/dt

dv/dt

kV/µs

I = -8.8 A, V = -48 , di/dt = 200 A/µs,

= 175 °C

jmax

Gate source voltage

Power dissipation

±20

tot

T = 25 °C

Operating and storage temperature

IEC climatic category; DIN IEC 68-1

T , T

-55...+175

55/175/56

°C

stg

Rev 1.5

Page 1

2009-04-14

12 3 4 5 6 7...10

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