Datasheet > SPP1015S52RG

SPP1015S52RG

更新时间： 2024-02-18 12:52:52

品牌	Logo	应用领域
擎力 - SYNC-POWER		/
页数	文件大小	规格书
8页	171K
描述
P-Channel Enhancement Mode MOSFET

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SPP1015S52RG 数据手册

SPP1015

P-Channel Enhancement Mode MOSFET

DESCRIPTION

APPLICATIONS

Drivers : Relays/Solenoids/Lamps/Hammers

Power Supply Converter Circuits

Load/Power Switching Cell Phones, Pagers

The SPP1015 is the P-Channel enhancement mode

power field effect transistors are produced using high cell

density , DMOS trench technology. This high density

process is especially tailored to minimize on-state

resistance and provide superior switching performance.

These devices are particularly suited for low voltage

applications such as notebook computer power

management and other battery powered circuits where

high-side switching , low in-line power loss, and

resistance to transients are needed.

FEATURES

PIN CONFIGURATION( SOT-523 / SC-89 )

P-Channel

-20V/0.45A,R^DS(ON)= 0.52Ω@VGS=-4.5V

-20V/0.35A,RDS(ON)= 0.70Ω@VGS=-2.5V

-20V/0.25A,R^DS(ON)= 0.95Ω@VGS=-1.8V

Super high density cell design for extremely low

RDS (ON)

Exceptional on-resistance and maximum DC

current capability

SOT-523 (SC-89) package design

PART MARKING

2013/01/ 08 Ver.1

Page 1

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