Datasheet > SPP11N80C3

SPP11N80C3

更新时间： 2024-11-17 22:34:59

品牌	Logo	应用领域
英飞凌 - INFINEON		晶体晶体管
页数	文件大小	规格书
12页	254K
描述
Cool MOS⑩ Power Transistor

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中文翻译

获取价格

数据手册
替代型号

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SPP11N80C3 数据手册

SPP11N80C3

SPA11N80C3

Final data

Cool MOS™ Power Transistor

800

0.45

Ω

Feature

DS(on)

• New revolutionary high voltage technology

• Ultra low gate charge

P-TO220-3-31 P-TO220-3-1

• Periodic avalanche rated

• Extreme dv/dt rated

• Ultra low effective capacitances

• Improved transconductance

P-TO220-3-31

• P-TO-220-3-31: Fully isolated package (2500 VAC; 1 minute)

Type

Package

Ordering Code

Marking

SPP11N80C3

P-TO220-3-1 Q67040-S4438

11N80C3

SPA11N80C3

P-TO220-3-31 Q67040-S4439

11N80C3

Maximum Ratings

Parameter

Symbol

Value

Unit

SPP

SPA

Continuous drain current

T = 25 °C

7.1

T = 100 °C

7.1

Pulsed drain current, t limited by T

D puls

jmax

Avalanche energy, single pulse

470

I =2.2A, V =50V

Avalanche energy, repetitive t limited by T

0.2

jmax

I =11A, V =50V

Avalanche current, repetitive t limited by T

Gate source voltage

±20

±30

jmax

±20

±30

156

tot

Gate source voltage AC (f >1Hz)

Power dissipation, T = 25°C

Operating and storage temperature

T , T

-55...+150

°C

stg

Page 1

2003-07-02

12 3 4 5 6 7...12

中文翻译

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SPP11N80C3 替代型号

型号	品牌	替代类型	描述	数据表
SPP08N80C3	INFINEON	类似代替	Cool MOS⑩ Power Transistor
SPW11N80C3	INFINEON	类似代替	Cool MOS™ Power Transistor
SPA04N80C3	INFINEON	类似代替	Cool MOS⑩ Power Transistor

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