Datasheet > SPP07N60CFDHKSA1

SPP07N60CFDHKSA1

更新时间： 2024-10-01 21:12:47

品牌	Logo	应用领域
英飞凌 - INFINEON		局域网
页数	文件大小	规格书
12页	570K
描述
Power Field-Effect Transistor, 6.6A I(D), 600V, 0.7ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-220AB, PLASTIC, TO-220, 3 PIN

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中文翻译

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技术参数
数据手册
替代型号

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SPP07N60CFDHKSA1 技术参数

是否无铅：	不含铅	是否Rohs认证：	符合
生命周期：	Obsolete	零件包装代码：	TO-220AB
包装说明：	FLANGE MOUNT, R-PSFM-T3	针数：	3
Reach Compliance Code：	compliant	ECCN代码：	EAR99
风险等级：	5.69	Base Number Matches：	1

SPP07N60CFDHKSA1 数据手册

SPP07N60CFD

CoolMOS^TMPower Transistor

Product Summary

V _DS@T_jmax

R _DS(on),max

I _D

Features

650

0.7

6.6

• Intrinsic fast-recovery body diode

• Extremely low reverse recovery charge

• Ultra low gate charge

• Extreme dv /dt rated

PG-TO220

• High peak current capability

• Qualified for industrial grade applications according to JEDEC¹⁾

CoolMOS CFD designed for:

• Soft switching PWM Stages

• LCD & CRT TV

Type

Package

Marking

SPP07N60CFD

PG-TO220

07N60CFD

Maximum ratings, at T _j=25 °C, unless otherwise specified

Value

6.6

Parameter

Symbol Conditions

Unit

I _D

T _C=25 °C

Continuous drain current

T _C=100 °C

4.3

Pulsed drain current²⁾

I _D,pulse

E _AS

E _AR

I _AR

T _C=25 °C

I _D=3.3 A, V _DD=50 V

I _D=6.6 A, V _DD=50 V

Avalanche energy, single pulse

230

0.5

6.6

Avalanche energy, repetitive^2),3)

Avalanche current, repetitive^2),3)

I _D=6.6 A, V _DS=480 V,

T _j=125°C

Drain source voltage slope

dv /dt

V/ns

600

Reverse diode dv /dt

dv /dt

V/ns

A/µs

I _S=6.6 A, V _DS=480 V,

T _j=125 °C

Maximum diode commutation speed di /dt

V _GS

±20

Gate source voltage

static

±30

AC (f >1 Hz)

T _C=25 °C

P _tot

Power dissipation

T _j, T _stg

-55 ... 150

Operating and storage temperature

Mounting torque

°C

M3 & M3.5 screws

page 1

Ncm

Rev. 1.4

2009-11-27

12 3 4 5 6 7...12

中文翻译

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SPP07N60CFDHKSA1 替代型号

型号	品牌	替代类型	描述	数据表
RF1S9630SM	INTERSIL	功能相似	6.5A, 200V, 0.800 Ohm, P-Channel Power MOSFETs

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