Datasheet > RF1S9630SM

RF1S9630SM

更新时间： 2024-11-08 22:43:59

品牌	Logo	应用领域
英特矽尔 - INTERSIL		/
页数	文件大小	规格书
7页	67K
描述
6.5A, 200V, 0.800 Ohm, P-Channel Power MOSFETs

阅读下载

中文翻译

获取价格

数据手册
替代型号

如果您发现信息不准确，欢迎纠错

RF1S9630SM 数据手册

IRF9630, RF1S9630SM

Data Sheet

July 1999

File Number 2224.3

6.5A, 200V, 0.800 Ohm, P-Channel Power

MOSFETs

Features

• 6.5A, 200V

These are P-Channel enhancement mode silicon gate

power ﬁeld effect transistors. They are advanced power

MOSFETs designed, tested, and guaranteed to withstand a

speciﬁed level of energy in the breakdown avalanche mode

of operation. All of these power MOSFETs are designed for

applications such as switching regulators, switching

converters, motor drivers, relay drivers and drivers for other

high-power switching devices. The high input impedance

allows these types to be operated directly from integrated

circuits.

• r

= 0.800Ω

DS(ON)

• Single Pulse Avalanche Energy Rated

• SOA is Power Dissipation Limited

• Nanosecond Switching Speeds

• Linear Transfer Characteristics

• High Input Impedance

• Related Literature

- TB334 “Guidelines for Soldering Surface Mount

Components to PC Boards”

Formerly developmental type TA17512.

Ordering Information

Symbol

PART NUMBER

IRF9630

RF1S9630SM

PACKAGE

TO-220AB

TO-263AB

BRAND

IRF9630

RF1S9630

NOTE: When ordering, use the entire part number. Add the suffix 9A to

obtain the TO-263AB variant in the tape and reel, i.e., RF1S9630SM9A.

Packaging

JEDEC TO-220AB

JEDEC TO-263AB

SOURCE

DRAIN

GATE

DRAIN

(FLANGE)

GATE

DRAIN (FLANGE)

SOURCE

CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.

4-27

12 3 4 5 6 7

中文翻译

下载PDF

RF1S9630SM 替代型号

型号	品牌	替代类型	描述	数据表
FQB7P20TM	ONSEMI	功能相似	功率 MOSFET，P 沟道，QFET®，-200 V，-7.3 A，690 mΩ，D2P
FDA50N50	ONSEMI	功能相似	功率 MOSFET，N 沟道，UniFETTM，500V，48A，105mΩ，TO-3P
IRFU9214PBF	VISHAY	功能相似	Power MOSFET

与RF1S9630SM相关器件

型号	品牌	获取价格	描述	数据表
RF1S9630SM9A	ETC	获取价格	TRANSISTOR \| MOSFET \| P-CHANNEL \| 200V V(BR)DSS \| 6.5A I(D) \| TO-263AB
RF1S9640	RENESAS	获取价格	11A, 200V, 0.5ohm, P-CHANNEL, Si, POWER, MOSFET, TO-262AA, TO-262AA, 3 PIN
RF1S9640SM	INTERSIL	获取价格	11A, 200V, 0.500 Ohm, P-Channel Power MOSFETs
RF1S9640SM	FAIRCHILD	获取价格	Power Field-Effect Transistor, 11A I(D), 200V, 0.5ohm, 1-Element, P-Channel, Silicon, Meta
RF1S9640SM9A	RENESAS	获取价格	11A, 200V, 0.5ohm, P-CHANNEL, Si, POWER, MOSFET, TO-263AB, TO-263AB, 3 PIN
RF1S9640SM9A	FAIRCHILD	获取价格	Power Field-Effect Transistor, 11A I(D), 200V, 0.5ohm, 1-Element, P-Channel, Silicon, Meta
RF1V	SANKEN	获取价格	Rectifier Diode, 1 Element, 0.6A, Silicon
RF1V4	SANKEN	获取价格	Rectifier Diode, 1 Element, 0.6A, Silicon
RF1VU7/A	SHARP	获取价格	Consumer Circuit,
RF1W	SANKEN	获取价格	Rectifier Diode, 1 Element, 0.6A, Silicon