是否无铅: | 不含铅 | 是否Rohs认证: | 符合 |
生命周期: | Not Recommended | 零件包装代码: | TO-220AB |
包装说明: | TO-220, 3 PIN | 针数: | 3 |
Reach Compliance Code: | compliant | Factory Lead Time: | 1 week |
风险等级: | 7.67 | Is Samacsys: | N |
其他特性: | AVALANCHE RATED | 雪崩能效等级(Eas): | 230 mJ |
外壳连接: | DRAIN | 配置: | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压: | 600 V | 最大漏极电流 (Abs) (ID): | 7.3 A |
最大漏极电流 (ID): | 7.3 A | 最大漏源导通电阻: | 0.6 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JEDEC-95代码: | TO-220AB |
JESD-30 代码: | R-PSFM-T3 | 元件数量: | 1 |
端子数量: | 3 | 工作模式: | ENHANCEMENT MODE |
最高工作温度: | 150 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | FLANGE MOUNT |
峰值回流温度(摄氏度): | NOT SPECIFIED | 极性/信道类型: | N-CHANNEL |
最大功率耗散 (Abs): | 83 W | 最大脉冲漏极电流 (IDM): | 21.9 A |
认证状态: | Not Qualified | 子类别: | FET General Purpose Power |
表面贴装: | NO | 端子形式: | THROUGH-HOLE |
端子位置: | SINGLE | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 替代类型 | 描述 | 数据表 |
SPA07N60C3 | INFINEON |
类似代替 |
Cool MOS⑩ Power Transistor | |
SPP07N60S5 | INFINEON |
类似代替 |
Cool MOS⑩ Power Transistor |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
SPP07N60C3_07 | INFINEON |
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New revolutionary high voltage technology Ultra low gate charge | |
SPP07N60C3_09 | INFINEON |
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New revolutionary high voltage technology Ultra low gate charge Extreme dv/dt rated | |
SPP07N60C3HKSA1 | INFINEON |
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Power Field-Effect Transistor, 7.3A I(D), 600V, 0.6ohm, 1-Element, N-Channel, Silicon, Met | |
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SPP07N60CFDHKSA1 | INFINEON |
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Power Field-Effect Transistor, 6.6A I(D), 600V, 0.7ohm, 1-Element, N-Channel, Silicon, Met | |
SPP07N60S5 | INFINEON |
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Cool MOS⑩ Power Transistor | |
SPP07N60S5_09 | INFINEON |
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Cool MOS? Power Transistor Feature New revolutionary high voltage technology | |
SPP07N60S5HKSA1 | INFINEON |
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Power Field-Effect Transistor, 7.3A I(D), 600V, 0.6ohm, 1-Element, N-Channel, Silicon, Met | |
SPP07N65C3 | INFINEON |
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Cool MOS⑩ Power Transistor | |
SPP07N65C3_09 | INFINEON |
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New revolutionary high voltage technology Ultra low gate charge Periodic avalanche rated |