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SPA07N60C3 PDF预览

SPA07N60C3

更新时间: 2024-11-28 22:21:31
品牌 Logo 应用领域
英飞凌 - INFINEON 晶体晶体管
页数 文件大小 规格书
14页 374K
描述
Cool MOS⑩ Power Transistor

SPA07N60C3 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Not Recommended零件包装代码:TO-220AB
包装说明:TO-220FP, 3 PIN针数:3
Reach Compliance Code:compliantFactory Lead Time:1 week
风险等级:7.85其他特性:AVALANCHE RATED
雪崩能效等级(Eas):230 mJ外壳连接:ISOLATED
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:600 V
最大漏极电流 (Abs) (ID):4.3 A最大漏极电流 (ID):7.3 A
最大漏源导通电阻:0.6 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:TO-220ABJESD-30 代码:R-PSFM-T3
元件数量:1端子数量:3
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):32 W
最大脉冲漏极电流 (IDM):21.9 A认证状态:Not Qualified
子类别:FET General Purpose Power表面贴装:NO
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

SPA07N60C3 数据手册

 浏览型号SPA07N60C3的Datasheet PDF文件第2页浏览型号SPA07N60C3的Datasheet PDF文件第3页浏览型号SPA07N60C3的Datasheet PDF文件第4页浏览型号SPA07N60C3的Datasheet PDF文件第5页浏览型号SPA07N60C3的Datasheet PDF文件第6页浏览型号SPA07N60C3的Datasheet PDF文件第7页 
SPP07N60C3, SPB07N60C3  
SPI07N60C3, SPA07N60C3  
Cool MOS™ Power Transistor  
Feature  
New revolutionary high voltage technology  
V
@ T  
650  
0.6  
7.3  
V
A
DS  
jmax  
R
DS(on)  
I
D
Ultra low gate charge  
P-TO220-3-31 P-TO262-3-1  
P-TO263-3-2  
P-TO220-3-1  
Periodic avalanche rated  
Extreme dv/dt rated  
2
3
High peak current capability  
Improved transconductance  
2
3
2
1
1
P-TO220-3-31  
P-TO220-3-1  
P-TO-220-3-31: Fully isolated package (2500 VAC; 1 minute)  
Type  
SPP07N60C3  
SPB07N60C3  
SPI07N60C3  
SPA07N60C3  
Package  
Ordering Code  
Marking  
P-TO220-3-1 Q67040-S4400  
P-TO263-3-2 Q67040-S4394  
P-TO262-3-1 Q67040-S4424  
07N60C3  
07N60C3  
07N60C3  
07N60C3  
P-TO220-3-31  
Q67040-S4409  
Maximum Ratings  
Parameter  
Symbol  
Value  
SPP_B_I  
Unit  
SPA  
Continuous drain current  
I
A
D
1)  
T = 25 °C  
7.3  
4.6  
7.3  
4.6  
C
1)  
T = 100 °C  
C
Pulsed drain current, t limited by T  
Avalanche energy, single pulse  
I
D puls  
21.9  
230  
21.9  
230  
A
mJ  
p
jmax  
E
AS  
I =5.5A, V =50V  
D
DD  
2)  
E
Avalanche energy, repetitive t limited by T  
0.5  
0.5  
AR  
AR  
jmax  
I =7.3A, V =50V  
D
DD  
Avalanche current, repetitive t limited by T  
Gate source voltage static  
I
7.3  
±20  
30  
7.3  
±20  
30  
A
V
AR  
jmax  
AR  
V
V
P
GS  
GS  
tot  
Gate source voltage AC (f >1Hz)  
Power dissipation, T = 25°C  
83  
32  
W
C
Operating and storage temperature  
T , T  
-55...+150  
°C  
j
stg  
Page 1  
Rev. 2.1  
2004-04-07  

SPA07N60C3 替代型号

型号 品牌 替代类型 描述 数据表
IPP80N06S2L-11 INFINEON

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SPP07N60C3 INFINEON

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Cool MOS⑩ Power Transistor

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