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SPA-1118Z

更新时间： 2024-11-22 03:31:23
品牌 Logo 应用领域
SIRENZA 放大器射频微波功率放大器
页数 文件大小 规格书
5页 109K
描述
850 MHz 1 Watt Power Amplifier with Active Bias

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中文翻译

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SPA-1118Z 数据手册

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SPA-1118  
Product Description  
RoHS Compliant  
& Green Package  
Pb  
Sirenza Microdevices’ SPA-1118 is a high efficiency GaAs  
Heterojunction Bipolar Transistor (HBT) amplifier housed in  
a low-cost surface-mountable plastic package. These HBT  
amplifiers are fabricated using molecular beam epitaxial  
growth technology which produces reliable and consistent  
performance from wafer to wafer and lot to lot.  
SPA-1118Z  
850 MHz 1 Watt Power Amplifier  
with Active Bias  
This product is specifically designed for use as a driver  
amplifier for infrastructure equipment in the 850 MHz band.  
Its high linearity makes it an ideal choice for wireless data and  
digital applications.  
The matte tin finish on Sirenza’s lead-free package utilizes a  
post annealing process to mitigate tin whisker formation and  
is RoHS compliant per EU Directive 2002/95. This package  
is also manufactured with green molding compounds that  
contain no antimony trioxide nor halogenated fire retardants.  
Product Features  
• Now available in Lead Free, RoHS  
Compliant, & Green Packaging  
• High Linearity Performance:  
+21 dBm IS-95 Channel Power at -55 dBc ACP  
+48 dBm OIP3 Typ.  
• On-chip Active Bias Control  
• Patented High Reliability GaAs HBT Technology  
• Surface-Mountable Plastic Package  
VCC  
N/C  
N/C  
Active Bias  
VBIAS  
RFOUT/  
VCC  
RFIN  
N/C  
Applications  
• Multi-Carrier Applications  
• AMPS, ISM Applications  
Input  
Match  
N/C  
Parameters: Test Conditions:  
Z0 = 50 Ohms, VCC = 5V, Temp = 25ºC  
Symbol  
Units  
Min.  
Typ.  
Max.  
f0  
Frequency of Operation  
MHz  
dBm  
810  
960  
Output Power at 1dB Compression  
29.5  
P1dB  
Adjacent Channel Power  
IS-95 @ 880 MHz, ±885 KHz, POUT = 21 dBm  
ACP  
dBc  
-57.0  
-54.0  
18.2  
Small Signal Gain, 880 MHz  
Input VSWR  
dB  
-
16.2  
17.2  
S21  
VSWR  
1.5:1  
Output Third Order Intercept Point  
Power out per tone = +14 dBm  
OIP3  
dBm  
48.0  
NF  
ICC  
Noise Figure  
dB  
mA  
V
7.5  
310  
5.0  
35  
Device Current  
275  
330  
VCC  
Device Voltage  
4.75  
5.25  
Rth,  
Thermal Resistance (junction - lead) , TL=85ºC  
ºC/W  
j-l  
The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for inaccuracies or omissions. Sirenza Microdevices assumes no responsibility for the use of this  
information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or  
granted to any third party. Sirenza Microdevices does not authorize or warrant any Sirenza Microdevices product for use in life-support devices and/or systems. Copyright 2002 Sirenza Microdevices, Inc. All worldwide rights  
reserved.  
303 S. Technology Court, Broomfield, CO 80021  
Phone: (800) SMI-MMIC  
1
http://www.sirenza.com  
EDS-101427 Rev I  
12345

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