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SPA11N60C3 PDF预览

SPA11N60C3

更新时间: 2024-02-10 15:58:19
品牌 Logo 应用领域
英飞凌 - INFINEON 晶体晶体管功率场效应晶体管开关脉冲局域网
页数 文件大小 规格书
14页 353K
描述
Cool MOS⑩ Power Transistor

SPA11N60C3 技术参数

是否无铅:不含铅是否Rohs认证:符合
生命周期:Not Recommended零件包装代码:TO-220AB
包装说明:FLANGE MOUNT, R-PSFM-T3针数:3
Reach Compliance Code:compliantFactory Lead Time:1 week
风险等级:6.88Is Samacsys:N
其他特性:AVALANCHE RATED雪崩能效等级(Eas):340 mJ
外壳连接:ISOLATED配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:600 V最大漏极电流 (Abs) (ID):5.5 A
最大漏极电流 (ID):11 A最大漏源导通电阻:0.38 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:TO-220AB
JESD-30 代码:R-PSFM-T3JESD-609代码:e3
元件数量:1端子数量:3
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):33 W
最大脉冲漏极电流 (IDM):33 A认证状态:Not Qualified
子类别:FET General Purpose Power表面贴装:NO
端子面层:TIN端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

SPA11N60C3 数据手册

 浏览型号SPA11N60C3的Datasheet PDF文件第2页浏览型号SPA11N60C3的Datasheet PDF文件第3页浏览型号SPA11N60C3的Datasheet PDF文件第4页浏览型号SPA11N60C3的Datasheet PDF文件第5页浏览型号SPA11N60C3的Datasheet PDF文件第6页浏览型号SPA11N60C3的Datasheet PDF文件第7页 
SPP11N60C3, SPB11N60C3  
SPI11N60C3, SPA11N60C3  
Final data  
Cool MOS™ Power Transistor  
V
@ T  
650  
0.38  
11  
V
A
DS  
jmax  
Feature  
R
DS(on)  
New revolutionary high voltage technology  
Ultra low gate charge  
I
D
P-TO220-3-31  
P-TO262-3-1  
P-TO263-3-2  
P-TO220-3-1  
Periodic avalanche rated  
Extreme dv/dt rated  
3
High peak current capability  
Improved transconductance  
2
1
P-TO220-3-31  
P-TO-220-3-31: Fully isolated package (2500 VAC; 1 minute)  
Type  
Package  
Ordering Code  
Marking  
SPP11N60C3  
SPB11N60C3  
SPI11N60C3  
SPA11N60C3  
P-TO220-3-1 Q67040-S4395  
P-TO263-3-2 Q67040-S4396  
P-TO262-3-1 Q67042-S4403  
11N60C3  
11N60C3  
11N60C3  
11N60C3  
P-TO220-3-31  
Q67040-S4408  
Maximum Ratings  
Parameter  
Symbol  
Value  
SPP_B  
SPP_B_I  
Unit  
SPA  
Continuous drain current  
I
A
D
1)  
T = 25 °C  
11  
7
11  
7
C
1)  
T = 100 °C  
C
Pulsed drain current, t limited by T  
I
D puls  
33  
33  
A
p
jmax  
Avalanche energy, single pulse  
E
340  
340  
mJ  
AS  
I =5.5A, V =50V  
D
DD  
2)  
E
Avalanche energy, repetitive t limited by T  
0.6  
0.6  
AR  
AR  
jmax  
I =11A, V =50V  
D
DD  
Avalanche current, repetitive t limited by T  
Gate source voltage static  
I
11  
11  
±20  
±30  
33  
A
V
AR  
jmax  
AR  
V
V
P
±20  
±30  
125  
GS  
GS  
tot  
Gate source voltage AC (f >1Hz)  
Power dissipation, T = 25°C  
W
C
Operating and storage temperature  
T , T  
-55...+150  
°C  
j
stg  
Page 1  
2003-07-01  

SPA11N60C3 替代型号

型号 品牌 替代类型 描述 数据表
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