SPA-1426Z
0.7GHz to
2.2GHz 1W
InGaP HBT
Amplifier
Preliminary
SPA-1426Z
0.7GHz to 2.2GHz 1W InGaP HBT AMPLIFIER
RoHS Compliant and Pb-Free Product
Package: SOF-26
Product Description
Features
RFMD’s SPA-1426Z is a high linearity single-stage class A Heterojunction Bipolar
Transistor (HBT) power amplifier. The SPA-1426Z is made with InGaP-on-GaAs
device technology and fabricated with MOCVD for an ideal combination of low cost
and high reliability. It is well suited for use as a driver stage in macro/micro-cell
infrastructure equipment, or as the final output stage in pico-cell infrastructure
equipment. It features an input power detector, on/off power control, ESD protec-
tion, excellent overall robustness and a hand reworkable and thermally enhanced
SOF-26 package.
P
=29.5dBm @ 2140MHz
1dB
ACP = -65dBc with 17.0dBm
Channel Power @ 2140MHz
Low Thermal Resistance
Package
Power Up/Down Control<1μs
Robust Class 1C ESD
ACP versus Channel Power, 2140MHz, W-CDMA
Optimum Technology
Matching® Applied
-35.0
Applications
-40°C
GaAs HBT
-40.0
-45.0
-50.0
-55.0
-60.0
-65.0
-70.0
-75.0
25°C
85°C
Macro/Micro-Cell Driver
Stage
GaAs MESFET
InGaP HBT
SiGe BiCMOS
Si BiCMOS
SiGe HBT
9
Pico-Cell Output Stage
GSM, CDMA, TDSCDMA,
WCDMA, IS-95
Single and Multi-Carrier Appli-
cations
GaAs pHEMT
Si CMOS
Si BJT
8.0
10.0
12.0
14.0
16.0
18.0
20.0
22.0
GaN HEMT
RF MEMS
Channel Power Out (dBm)
Specification
Parameter
Unit
Condition
Min.
Typ.
Max.
Small Signal Gain
16.5
14.0
14.0
29.5
28.5
29.5
43.0
dB
dB
885MHz
1960MHz
2140MHz
885MHz
1960MHz
2140MHz
885MHz
dB
Output Power at 1dB Compression
dBm
dBm
dBm
dBm
Output Third Order Intercept Point, 18dBm per
tone, 1MHz spacing
47.0
46.5
dBm
dBm
1960MHz
2140MHz
W-CDMA Channel Power
-65dBc ACP
3GPP 3.5, test model 1, 64 DPCH
885MHz
14.2
18.4
16.5
18.5
17.0
19.0
18.0
10.5
5.4
dBm
dBm
dBm
dBm
dBm
dBm
dB
-55dBc ACP
885MHz
-65dBc ACP
1960MHz
-55dBc ACP
1960MHz
-65dBc ACP
2140MHz
-55dBc ACP
2140MHz
Input Return Loss
Output Return Loss
Noise Figure
15.0
8.0
1960MHz
dB
1960MHz
dB
1960MHz
Operating Current (VCC=5V), Quiescent
325.0
mA
Operating Voltage
5.0
2.1
5.5
V
Power Up Control Current (VPC=5V)
mA
V
CC Leakage Current (VCC=5V, VPC=0V)
Thermal Resistance (junction to lead)
Test Conditions: VCC=5V ICQ=325mA Typ. TL=25°C ZS=ZL=50Ω
100.0
μA
21
°C/W
RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade-
mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc.
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
EDS-105883 Rev B
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