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SPA-1426Z-EVB2

更新时间： 2024-11-22 07:03:55
品牌 Logo 应用领域
威讯 - RFMD 放大器
页数 文件大小 规格书
14页 518K
描述
0.7GHz to 2.2GHz 1W InGaP HBT AMPLIFIER

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SPA-1426Z-EVB2 数据手册

 浏览型号SPA-1426Z-EVB2的Datasheet PDF文件第2页浏览型号SPA-1426Z-EVB2的Datasheet PDF文件第3页浏览型号SPA-1426Z-EVB2的Datasheet PDF文件第4页浏览型号SPA-1426Z-EVB2的Datasheet PDF文件第5页浏览型号SPA-1426Z-EVB2的Datasheet PDF文件第6页浏览型号SPA-1426Z-EVB2的Datasheet PDF文件第7页 
SPA-1426Z  
0.7GHz to  
2.2GHz 1W  
InGaP HBT  
Amplifier  
Preliminary  
SPA-1426Z  
0.7GHz to 2.2GHz 1W InGaP HBT AMPLIFIER  
RoHS Compliant and Pb-Free Product  
Package: SOF-26  
Product Description  
Features  
RFMD’s SPA-1426Z is a high linearity single-stage class A Heterojunction Bipolar  
Transistor (HBT) power amplifier. The SPA-1426Z is made with InGaP-on-GaAs  
device technology and fabricated with MOCVD for an ideal combination of low cost  
and high reliability. It is well suited for use as a driver stage in macro/micro-cell  
infrastructure equipment, or as the final output stage in pico-cell infrastructure  
equipment. It features an input power detector, on/off power control, ESD protec-  
tion, excellent overall robustness and a hand reworkable and thermally enhanced  
SOF-26 package.  
„
P
=29.5dBm @ 2140MHz  
1dB  
„
ACP = -65dBc with 17.0dBm  
Channel Power @ 2140MHz  
„
Low Thermal Resistance  
Package  
„
„
Power Up/Down Control<1μs  
Robust Class 1C ESD  
ACP versus Channel Power, 2140MHz, W-CDMA  
Optimum Technology  
Matching® Applied  
-35.0  
Applications  
-40°C  
GaAs HBT  
-40.0  
-45.0  
-50.0  
-55.0  
-60.0  
-65.0  
-70.0  
-75.0  
25°C  
85°C  
„
Macro/Micro-Cell Driver  
Stage  
GaAs MESFET  
InGaP HBT  
SiGe BiCMOS  
Si BiCMOS  
SiGe HBT  
9
„
„
Pico-Cell Output Stage  
GSM, CDMA, TDSCDMA,  
WCDMA, IS-95  
„
Single and Multi-Carrier Appli-  
cations  
GaAs pHEMT  
Si CMOS  
Si BJT  
8.0  
10.0  
12.0  
14.0  
16.0  
18.0  
20.0  
22.0  
GaN HEMT  
RF MEMS  
Channel Power Out (dBm)  
Specification  
Parameter  
Unit  
Condition  
Min.  
Typ.  
Max.  
Small Signal Gain  
16.5  
14.0  
14.0  
29.5  
28.5  
29.5  
43.0  
dB  
dB  
885MHz  
1960MHz  
2140MHz  
885MHz  
1960MHz  
2140MHz  
885MHz  
dB  
Output Power at 1dB Compression  
dBm  
dBm  
dBm  
dBm  
Output Third Order Intercept Point, 18dBm per  
tone, 1MHz spacing  
47.0  
46.5  
dBm  
dBm  
1960MHz  
2140MHz  
W-CDMA Channel Power  
-65dBc ACP  
3GPP 3.5, test model 1, 64 DPCH  
885MHz  
14.2  
18.4  
16.5  
18.5  
17.0  
19.0  
18.0  
10.5  
5.4  
dBm  
dBm  
dBm  
dBm  
dBm  
dBm  
dB  
-55dBc ACP  
885MHz  
-65dBc ACP  
1960MHz  
-55dBc ACP  
1960MHz  
-65dBc ACP  
2140MHz  
-55dBc ACP  
2140MHz  
Input Return Loss  
Output Return Loss  
Noise Figure  
15.0  
8.0  
1960MHz  
dB  
1960MHz  
dB  
1960MHz  
Operating Current (VCC=5V), Quiescent  
325.0  
mA  
Operating Voltage  
5.0  
2.1  
5.5  
V
Power Up Control Current (VPC=5V)  
mA  
V
CC Leakage Current (VCC=5V, VPC=0V)  
Thermal Resistance (junction to lead)  
Test Conditions: VCC=5V ICQ=325mA Typ. TL=25°C ZS=ZL=50Ω  
100.0  
μA  
21  
°C/W  
RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade-  
mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc.  
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical  
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.  
EDS-105883 Rev B  
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