Datasheet > SPA12N50C3

SPA12N50C3

更新时间： 2024-11-21 22:21:31

品牌	Logo	应用领域
英飞凌 - INFINEON		晶体晶体管开关脉冲局域网
页数	文件大小	规格书
13页	365K
描述
Cool MOS⑩ Power Transistor

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中文翻译

获取价格

数据手册
替代型号

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SPA12N50C3 数据手册

SPP12N50C3, SPB12N50C3

SPI12N50C3, SPA12N50C3

Cool MOS™ Power Transistor

Feature

• New revolutionary high voltage technology

@ T

560

0.38

11.6

Ω

jmax

DS(on)

• Ultra low gate charge

P-TO220-3-31 P-TO262

P-TO263-3-2

P-TO220-3-1

• Periodic avalanche rated

• Extreme dv/dt rated

• Ultra low effective capacitances

• Improved transconductance

P-TO220-3-31

P-TO220-3-1

• P-TO-220-3-31: Fully isolated package (2500 VAC; 1 minute)

Type

Package

P-TO220-3-1 Q67040-S4579

P-TO263-3-2 Q67040-S4641

P-TO262

Ordering Code

Marking

12N50C3

SPP12N50C3

SPB12N50C3

SPI12N50C3

SPA12N50C3

Q67040-S4578

Q67040-S4577

P-TO220-3-31

Maximum Ratings

Parameter

Symbol

Value

SPP_B_I

Unit

SPA

Continuous drain current

T = 25 °C

11.6

T = 100 °C

Pulsed drain current, t limited by T

Avalanche energy, single pulse

D puls

34.8

340

34.8

340

jmax

I =5.5A, V =50V

Avalanche energy, repetitive t limited by T

0.6

jmax

I =11.6A, V =50V

Avalanche current, repetitive t limited by T

Gate source voltage

11.6

±20

11.6

±20

jmax

tot

Gate source voltage AC (f >1Hz)

Power dissipation, T = 25°C

125

Operating and storage temperature

T , T

-55...+150

°C

stg

Page 1

Rev. 2.1

2004-03-29

12 3 4 5 6 7...13

中文翻译

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SPA12N50C3 替代型号

型号	品牌	替代类型	描述	数据表
STP14NM50N	STMICROELECTRONICS	功能相似	N-channel 500 V, 0.28 Î© typ., 12 A MDmeshâ¢
STP12NM50	STMICROELECTRONICS	功能相似	N-CHANNEL 500V - 0.3W - 12A TO-220/TO-220FP/I PAK MDmesh]Power MOSFET
STP14NK50ZFP	STMICROELECTRONICS	功能相似	N-CHANNEL 500V-0.34ohm-14ATO-220/FP/D2PAK/I2P

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