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SPA-1526Z-EVB3

更新时间： 2024-11-22 07:03:55
品牌 Logo 应用领域
威讯 - RFMD 放大器
页数 文件大小 规格书
14页 374K
描述
0.7GHz to 2.2GHz 2W InGaP HBT AMPLIFIER

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SPA-1526Z-EVB3 数据手册

 浏览型号SPA-1526Z-EVB3的Datasheet PDF文件第2页浏览型号SPA-1526Z-EVB3的Datasheet PDF文件第3页浏览型号SPA-1526Z-EVB3的Datasheet PDF文件第4页浏览型号SPA-1526Z-EVB3的Datasheet PDF文件第5页浏览型号SPA-1526Z-EVB3的Datasheet PDF文件第6页浏览型号SPA-1526Z-EVB3的Datasheet PDF文件第7页 
SPA-1526Z  
0.7GHz to  
2.2GHz 2W  
InGaP HBT  
Amplifier  
Preliminary  
SPA-1526Z  
0.7GHz to 2.2GHz 2W InGaP HBT AMPLIFIER  
RFMD Green, RoHS Compliant, Pb-Free Product  
Package: SOF-26  
Product Description  
Features  
RFMD’s SPA-1526Z is a high linearity single-stage class A Heterojunction Bipolar  
Transistor (HBT) power amplifier. The SPA-1526Z is made with InGaP-on-GaAs  
device technology and fabricated with MOCVD for an ideal combination of low cost  
and high reliability. It is well suited for use as a driver stage in macro/micro-cell  
infrastructure equipment, or as the final output stage in pico-cell infrastructure  
equipment. It features an input power detector, on/off power control, ESD protec-  
tion, excellent overall robustness, and a hand reworkable and thermally enhanced  
SOF-26 package.  
„
P
=32dBm @ 2140MHz  
1dB  
„
ACP=-65dBc with 18.4dBm  
Channel Power @ 2140MHz  
„
Low Thermal Resistance  
Package  
„
„
Power Up/Down Control<1μs  
Robust Class 1C ESD  
ACP versus Channel Power, Over Frequency,  
Optimum Technology  
WCDMA  
Matching® Applied  
-35.0  
Applications  
880MHz  
GaAs HBT  
GaAs MESFET  
InGaP HBT  
SiGe BiCMOS  
Si BiCMOS  
SiGe HBT  
1960MHz  
2140MHz  
-40.0  
-45.0  
-50.0  
-55.0  
-60.0  
-65.0  
-70.0  
-75.0  
„
Macro/Micro-Cell Driver  
Stage  
9
„
„
Pico-Cell Output Stage  
GSM, CDMA, TDSCDMA,  
WCDMA, IS-95  
„
Single and Multi-Carrier Appli-  
cations  
GaAs pHEMT  
Si CMOS  
Si BJT  
GaN HEMT  
RF MEMS  
10.0  
12.0  
14.0  
16.0  
18.0  
20.0  
22.0  
24.0  
POUT (dBm)  
Specification  
Parameter  
Unit  
Condition  
Min.  
Typ.  
15.4  
Max.  
Small Signal Power Gain  
dB  
885MHz  
14.0  
13.5  
32.5  
dB  
dB  
dBm  
1960MHz  
2140MHz  
885MHz  
Output Power at 1dB Compression  
Output Third Order Intercept Point  
32.5  
32.0  
45.5  
dBm  
dBm  
dBm  
1960MHz  
2140MHz  
885MHz  
49.0  
49.0  
dBm  
dBm  
1960MHz  
2140MHz  
WCDMA Channel Power  
-65dBc ACP  
3GPP 3.5, test model 1, 64 DPCH  
885MHz  
885MHz  
1960MHz  
1960MHz  
2140MHz  
2140MHz  
1960MHz  
16.5  
20.7  
18.6  
22.3  
18.4  
21.3  
20.0  
dBm  
dBm  
dBm  
dBm  
dBm  
dBm  
dB  
-55dBc ACP  
-65dBc ACP  
-55dBc ACP  
-65dBc ACP  
-55dBm ACP  
Input Return Loss  
Output Return Loss  
14.5  
dB  
1960MHz  
1960MHz  
Noise Figure  
5.5  
dB  
Quiescent Current (VCC=5V)  
645  
mA  
Operating Voltage  
5.0  
5.5  
V
Operating Current (VCC=5V), Quiescent  
645  
mA  
Power Up Control Current (VPC=5V)  
VCC Leakage Current (VCC=5V, VPC=0V)  
Thermal Resistance (junction to lead)  
2.1  
mA  
μA  
100  
12.0  
°C/W  
Test Conditions: VCC=5V ICQ=645mA Typ. TL=25°C ZS=ZL=50Ω  
RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade-  
mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc.  
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical  
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.  
EDS-105847 Rev D  
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