SPA13003
Ordering number : ENA1402
SANYO Sem iconductors
DATA S HEET
SPA13003
(13003 series)
Features
NPN Triple Diffused Planar Silicon Transistor
Switching Regulator Applications
•
High breakdown voltage.
•
High-speed switching.
•
Wide ASO.
•
Adoption of MBIT process.
Specifications
at Ta=25°C
Absolute Maximum Ratings
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Symbol
Conditions
Ratings
Unit
V
V
V
V
V
700
700
400
8
CBO
CES
CEO
EBO
V
V
V
I
I
I
1
A
C
Collector Current (Pulse)
Base Current
PW 300 s, duty cycle 10%
2
A
≤
μ
≤
CP
B
0.5
0.6
150
A
Collector Dissipation
Junction Temperature
Storage Temperature
P
W
C
Tj
C
C
°
°
Tstg
-55 to +150
at Ta=25°C
Electrical Characteristics
Ratings
typ
Parameter
Symbol
Conditions
Unit
min
max
10
Collector Cutoff Current
Emitter Cutoff Current
I
I
V
V
V
V
V
=400V, I =0A
A
A
μ
CBO
EBO
CB
E
=5V, I =0A
10
μ
EB
CE
CE
CE
C
h
h
h
1
FE
2
FE
3
FE
=5V, I =0.1A
15
5
35
C
DC Current Gain
=5V, I =0.5A
C
=5V, I =1mA
7
C
Continued on next page.
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