Datasheet > SPA-1318

SPA-1318

更新时间： 2024-11-22 09:10:03

品牌	Logo	应用领域
STANFORD		放大器功率放大器
页数	文件大小	规格书
6页	225K
描述
2150 MHz 1 Watt Power Amplifier with Active Bias

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

SPA-1318 数据手册

Preliminary

Product Description

SPA-1318

Stanford Microdevices’ SPA-1318 is a high efficiency GaAs

Heterojunction Bipolar Transistor (HBT) amplifier housed in

a low-cost surface-mountable plastic package. These HBT

amplifiers are fabricated using molecular beam epitaxial

growth technology which produces reliable and consistent

performance from wafer to wafer and lot to lot.

2150 MHz 1 Watt Power Amplifier

with Active Bias

This product is specifically designed for use as a driver

amplifier for infrastructure equipment in the 2150 MHz PCS

band. Its high linearity makes it an ideal choice for multi-carrier

and digital applications.

Product Features

• On-chip Active Bias Control

• Power Control Allows Power Consumption

Reduction

•Patented High Reliability GaAsHBT Technology

•High Linearity Performance: +48dBm OIP3 Typ.

• Surface-Mountable Plastic Package

Active

Bias

VCC

VBIAS

RFOUT/

VCC

Applications

RFIN

N/C

Input

Match

• W-CDMA Systems

• Multi-Carrier Applications

Parameters: Test Conditions:

Symbol

Units

Min.

Typ.

Max.

Z₀= 50 Ohms Temp = 25ºC, Vcc = 5.0V

f₀

Frequency of Operation

MHz

dBm

2110

2170

Output Power at 1dB Compression

29.5

P_1dB

Small Signal Gain

Input VSWR

11.5

S₂₁

VSWR

1.4:1

Output Third Order Intercept Point

Power out per tone = +14dBm

OIP₃

dBm

48.0

Icc

Device Current

320

R_th, j-l

Thermal Resistance (junction - lead)

ºC/W

The information provided herein is believed to be reliable at press time. Stanford Microdevices assumes no responsibility for inaccuracies or omissions.

Stanford Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user’s own risk. Prices and specifications are

subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Stanford Microdevices does not

authorize or warrant any Stanford Microdevices product for use in life-support devices and/or systems.

726 Palomar Ave., Sunnyvale, CA 94085

Phone: (800) SMI-MMIC

http://www.stanfordmicro.com

EDS-101429 Rev B

12 3 4 5 6

中文翻译

下载PDF

与SPA-1318相关器件

型号	品牌	获取价格	描述	数据表
SPA-1426Z	RFMD	获取价格	0.7GHz to 2.2GHz 1W InGaP HBT AMPLIFIER
SPA-1426Z-EVB1	RFMD	获取价格	0.7GHz to 2.2GHz 1W InGaP HBT AMPLIFIER
SPA-1426Z-EVB2	RFMD	获取价格	0.7GHz to 2.2GHz 1W InGaP HBT AMPLIFIER
SPA-1426Z-EVB3	RFMD	获取价格	0.7GHz to 2.2GHz 1W InGaP HBT AMPLIFIER
SPA1501	RECTRON	获取价格	SILICON RECTIFIER VOLAGE RANGE 50 to 600 Volts CURRENT 15 Ampere
SPA1502	RECTRON	获取价格	SILICON RECTIFIER VOLAGE RANGE 50 to 600 Volts CURRENT 15 Ampere
SPA1503	RECTRON	获取价格	SILICON RECTIFIER VOLAGE RANGE 50 to 600 Volts CURRENT 15 Ampere
SPA1503-T-S-A01	RECTRON	获取价格	SILICON RECTIFIER VOLAGE 200 Volts CURRENT 15 Ampere
SPA1503-T-S-A01-HF	RECTRON	获取价格	暂无描述
SPA1504	RECTRON	获取价格	SILICON RECTIFIER VOLAGE RANGE 50 to 600 Volts CURRENT 15 Ampere

与SPA-1318相关文章

解析光耦仿真器：升级光耦合器技术的必要性
2024-11-18

35
英伟达新一代Blackwell GPU过热问题致交付延迟
2024-11-18

26
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

54
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

52

产品中心

服务支持

精选活动

关于我们

帮助中心

SPA-1318

SPA-1318 数据手册

与SPA-1318相关器件

与SPA-1318相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

SPA-1318

SPA-1318 数据手册

与SPA-1318相关器件

与SPA-1318相关文章

您还可以找

您在本页遇到什么问题？