Datasheet > SPA11N60CFD_10

SPA11N60CFD_10

更新时间： 2024-02-15 20:24:52

品牌	Logo	应用领域
英飞凌 - INFINEON		晶体晶体管
页数	文件大小	规格书
12页	201K
描述
CoolMOSTM Power Transistor Features New revolutionary high voltage technology

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SPA11N60CFD_10 数据手册

SPA11N60CFD

CoolMOS^TMPower Transistor

Features

Product Summary

V _DS

600

0.44

• New revolutionary high voltage technology

• Intrinsic fast-recovery body diode

R _DS(on),max

I _D

• Extremely low reverse recovery charge

• Ultra low gate charge

PG-TO220-3-31

• Extreme dv /dt rated

• High peak current capability

• Periodic avalanche rated

• Qualified according to JEDEC⁰⁾for target applications

Type

Package

Ordering Code

Marking

SPA11N60CFD

TO-220-3-31

SP000216317

11N60CFD

Maximum ratings, at T _j=25 °C, unless otherwise specified

Value

Parameter

Symbol Conditions

Unit

Continuous drain current¹⁾

I _D

T _C=25 °C

T _C=100 °C

T _C=25 °C

Pulsed drain current²⁾

I _D,pulse

E _AS

E _AR

I _AR

I _D=5.5 A, V _DD=50 V

I _D=11 A, V _DD=50 V

Avalanche energy, single pulse

340

0.6

Avalanche energy, repetitive^2),3)

Avalanche current, repetitive^2),3)

I _D=11 A, V _DS=480 V,

T _j=125 °C

Drain source voltage slope

dv /dt

V/ns

600

Reverse diode dv /dt

V/ns

A/µs

I _S=11 A, V _DS=480 V,

T _j=125 °C

Maximum diode commutation speed di /dt

V _GS

±20

Gate source voltage

static

±30

AC (f >1 Hz)

T _C=25 °C

P _tot

Power dissipation

T _j, T _stg

-55 ... 150

Operating and storage temperature

°C

Rev. 1.3

page 1

2010-01-12

12 3 4 5 6 7...12

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