Datasheet > SPA1118ZSQ

SPA1118ZSQ

更新时间： 2024-11-23 01:09:19

品牌	Logo	应用领域
威讯 - RFMD		放大器射频微波功率放大器
页数	文件大小	规格书
6页	436K
描述
850MHz 1WATT POWER AMPLIFIER WITH ACTIVE BIAS

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SPA1118ZSQ 数据手册

SPA1118Z

850MHz

1Watt Power

Amplifier with

Active Bias

SPA1118Z

850MHz 1WATT POWER AMPLIFIER WITH

ACTIVE BIAS

Package: Exposed Pad SOIC-8

Product Description

Features

RFMD’s SPA1118Z is a high efficiency GaAs Heterojunction Bipolar Tran-

sistor (HBT) amplifier housed in a low-cost surface-mountable plastic

package. These HBT amplifiers are fabricated using molecular beam epi-

taxial growth technology which produces reliable and consistent perfor-

mance from wafer to wafer and lot to lot. This product is specifically

designed for use as a driver amplifier for infrastructure equipment in the

850MHz band. Its high linearity makes it an ideal choice for wireless data

and digital applications.



High Linearity Performance



+21dBm IS-95 Channel

Power at -55dBc ACP



+48dBm OIP3 Typ.

On-Chip Active Bias Control

Patented High Reliability

GaAs HBT Technology

Optimum Technology

Matching® Applied



Surface-Mountable Plastic

Package

GaAs HBT



Applications

GaAs MESFET

VCC

N/C

InGaP HBT

SiGe BiCMOS

Si BiCMOS

SiGe HBT

GaAs pHEMT

Si CMOS



Multi-Carrier Applications

AMPS, ISM Applications

Active Bias

VBIAS



RFOUT/

VCC

RFIN

N/C

Input

Match

N/C

Si BJT

GaN HEMT

RF MEMS

Specification

Typ.

Parameter

Unit

Condition

Min.

810

Max.

960

Frequency of Operation

Output Power at 1dB Compression

Adjacent Channel Power

MHz

dBm

dBc

29.5

-57.0

-54.0

18.2

IS-95 at 880MHz, ±885 KHz, P =21dBm

OUT

Small Signal Gain

16.2

17.2

1.5:1

48.0

7.5

310

5.0

880MHz

Input VSWR

Output Third Order Intercept Point

Noise Figure

Device Current

Device Voltage

Thermal Resistance (junction-lead)

dBm

Power out per tone=+14dBm

275

4.75

330

5.25

°C/W

T =85°C

Test Conditions: Z =50

V =5V Temp=25°C

RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade-

mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc.

7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical

support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.

DS121024

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与SPA1118ZSQ相关器件

型号	品牌	获取价格	描述	数据表
SPA1118ZSR	RFMD	获取价格	850MHz 1WATT POWER AMPLIFIER WITH ACTIVE BIAS
SPA11A152KA5	KYOCERA AVX	获取价格	Array/Network Capacitor, 100V, C0G, 0.0015uF, Through Hole Mount, SIP-5, SIP
SPA11A152KA7	KYOCERA AVX	获取价格	Array/Network Capacitor, 100V, C0G, 0.0015uF, Through Hole Mount, SIP-7, SIP
SPA11C333KAA	KYOCERA AVX	获取价格	Array/Network Capacitor, 100V, X7R, 0.033uF, Through Hole Mount, SIP-10, SIP
SPA11C333MAA	KYOCERA AVX	获取价格	Array/Network Capacitor, 100V, X7R, 0.033uF, Through Hole Mount, SIP-10, SIP
SPA11C333ZA6	KYOCERA AVX	获取价格	Array/Network Capacitor, 100V, X7R, 0.033uF, Through Hole Mount, SIP-6, SIP
SPA11E104MA4	KYOCERA AVX	获取价格	Array/Network Capacitor, 100V, Z5U, 0.1uF, Through Hole Mount, SIP-4, SIP
SPA11E104PA8	KYOCERA AVX	获取价格	Array/Network Capacitor, 100V, Z5U, 0.1uF, Through Hole Mount, SIP-8, SIP
SPA11E104ZA8	KYOCERA AVX	获取价格	Array/Network Capacitor, 100V, Z5U, 0.1uF, Through Hole Mount, SIP-8, SIP
SPA11N60C2	INFINEON	获取价格	Cool MOS⑩ Power Transistor

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