Datasheet > SPA-1118

SPA-1118

更新时间： 2024-11-22 03:31:23

品牌	Logo	应用领域
SIRENZA		放大器功率放大器
页数	文件大小	规格书
5页	109K
描述
850 MHz 1 Watt Power Amplifier with Active Bias

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中文翻译

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SPA-1118 数据手册

SPA-1118

Product Description

RoHS Compliant

& Green Package

Sirenza Microdevices’ SPA-1118 is a high efficiency GaAs

Heterojunction Bipolar Transistor (HBT) amplifier housed in

a low-cost surface-mountable plastic package. These HBT

amplifiers are fabricated using molecular beam epitaxial

growth technology which produces reliable and consistent

performance from wafer to wafer and lot to lot.

SPA-1118Z

850 MHz 1 Watt Power Amplifier

with Active Bias

This product is specifically designed for use as a driver

amplifier for infrastructure equipment in the 850 MHz band.

Its high linearity makes it an ideal choice for wireless data and

digital applications.

The matte tin finish on Sirenza’s lead-free package utilizes a

post annealing process to mitigate tin whisker formation and

is RoHS compliant per EU Directive 2002/95. This package

is also manufactured with green molding compounds that

contain no antimony trioxide nor halogenated fire retardants.

Product Features

• Now available in Lead Free, RoHS

Compliant, & Green Packaging

• High Linearity Performance:

+21 dBm IS-95 Channel Power at -55 dBc ACP

+48 dBm OIP3 Typ.

• On-chip Active Bias Control

• Patented High Reliability GaAs HBT Technology

• Surface-Mountable Plastic Package

VCC

N/C

Active Bias

VBIAS

RFOUT/

VCC

RFIN

N/C

Applications

• Multi-Carrier Applications

• AMPS, ISM Applications

Input

Match

N/C

Parameters: Test Conditions:

Z₀= 50 Ohms, V_CC= 5V, Temp = 25ºC

Symbol

Units

Min.

Typ.

Max.

f₀

Frequency of Operation

MHz

dBm

810

960

Output Power at 1dB Compression

29.5

P_1dB

Adjacent Channel Power

IS-95 @ 880 MHz, ±885 KHz, P_OUT= 21 dBm

ACP

dBc

-57.0

-54.0

18.2

Small Signal Gain, 880 MHz

Input VSWR

16.2

17.2

S₂₁

VSWR

1.5:1

Output Third Order Intercept Point

Power out per tone = +14 dBm

OIP₃

dBm

48.0

I_CC

Noise Figure

7.5

310

5.0

Device Current

275

330

V_CC

Device Voltage

4.75

5.25

R_th,

Thermal Resistance (junction - lead) , T_L=85ºC

ºC/W

j-l

The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for inaccuracies or omissions. Sirenza Microdevices assumes no responsibility for the use of this

information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or

granted to any third party. Sirenza Microdevices does not authorize or warrant any Sirenza Microdevices product for use in life-support devices and/or systems. Copyright 2002 Sirenza Microdevices, Inc. All worldwide rights

reserved.

303 S. Technology Court, Broomfield, CO 80021

Phone: (800) SMI-MMIC

http://www.sirenza.com

EDS-101427 Rev I

12 3 4 5

中文翻译

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与SPA-1118相关器件

型号	品牌	获取价格	描述	数据表
SPA1118Z	RFMD	获取价格	850MHz 1WATT POWER AMPLIFIER WITH ACTIVE BIAS
SPA-1118Z	SIRENZA	获取价格	850 MHz 1 Watt Power Amplifier with Active Bias
SPA1118Z-EVB1	RFMD	获取价格	850MHz 1WATT POWER AMPLIFIER WITH ACTIVE BIAS
SPA1118ZSQ	RFMD	获取价格	850MHz 1WATT POWER AMPLIFIER WITH ACTIVE BIAS
SPA1118ZSR	RFMD	获取价格	850MHz 1WATT POWER AMPLIFIER WITH ACTIVE BIAS
SPA11A152KA5	KYOCERA AVX	获取价格	Array/Network Capacitor, 100V, C0G, 0.0015uF, Through Hole Mount, SIP-5, SIP
SPA11A152KA7	KYOCERA AVX	获取价格	Array/Network Capacitor, 100V, C0G, 0.0015uF, Through Hole Mount, SIP-7, SIP
SPA11C333KAA	KYOCERA AVX	获取价格	Array/Network Capacitor, 100V, X7R, 0.033uF, Through Hole Mount, SIP-10, SIP
SPA11C333MAA	KYOCERA AVX	获取价格	Array/Network Capacitor, 100V, X7R, 0.033uF, Through Hole Mount, SIP-10, SIP
SPA11C333ZA6	KYOCERA AVX	获取价格	Array/Network Capacitor, 100V, X7R, 0.033uF, Through Hole Mount, SIP-6, SIP

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