Datasheet > SPA1118Z

SPA1118Z

更新时间： 2024-11-23 01:09:19

品牌	Logo	应用领域
威讯 - RFMD		放大器射频微波功率放大器
页数	文件大小	规格书
6页	436K
描述
850MHz 1WATT POWER AMPLIFIER WITH ACTIVE BIAS

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SPA1118Z 数据手册

SPA1118Z

850MHz

1Watt Power

Amplifier with

Active Bias

SPA1118Z

850MHz 1WATT POWER AMPLIFIER WITH

ACTIVE BIAS

Package: Exposed Pad SOIC-8

Product Description

Features

RFMD’s SPA1118Z is a high efficiency GaAs Heterojunction Bipolar Tran-

sistor (HBT) amplifier housed in a low-cost surface-mountable plastic

package. These HBT amplifiers are fabricated using molecular beam epi-

taxial growth technology which produces reliable and consistent perfor-

mance from wafer to wafer and lot to lot. This product is specifically

designed for use as a driver amplifier for infrastructure equipment in the

850MHz band. Its high linearity makes it an ideal choice for wireless data

and digital applications.



High Linearity Performance



+21dBm IS-95 Channel

Power at -55dBc ACP



+48dBm OIP3 Typ.

On-Chip Active Bias Control

Patented High Reliability

GaAs HBT Technology

Optimum Technology

Matching® Applied



Surface-Mountable Plastic

Package

GaAs HBT



Applications

GaAs MESFET

VCC

N/C

InGaP HBT

SiGe BiCMOS

Si BiCMOS

SiGe HBT

GaAs pHEMT

Si CMOS



Multi-Carrier Applications

AMPS, ISM Applications

Active Bias

VBIAS



RFOUT/

VCC

RFIN

N/C

Input

Match

N/C

Si BJT

GaN HEMT

RF MEMS

Specification

Typ.

Parameter

Unit

Condition

Min.

810

Max.

960

Frequency of Operation

Output Power at 1dB Compression

Adjacent Channel Power

MHz

dBm

dBc

29.5

-57.0

-54.0

18.2

IS-95 at 880MHz, ±885 KHz, P =21dBm

OUT

Small Signal Gain

16.2

17.2

1.5:1

48.0

7.5

310

5.0

880MHz

Input VSWR

Output Third Order Intercept Point

Noise Figure

Device Current

Device Voltage

Thermal Resistance (junction-lead)

dBm

Power out per tone=+14dBm

275

4.75

330

5.25

°C/W

T =85°C

Test Conditions: Z =50

V =5V Temp=25°C

RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade-

mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc.

7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical

support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.

DS121024

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与SPA1118Z相关器件

型号	品牌	获取价格	描述	数据表
SPA-1118Z	SIRENZA	获取价格	850 MHz 1 Watt Power Amplifier with Active Bias
SPA1118Z-EVB1	RFMD	获取价格	850MHz 1WATT POWER AMPLIFIER WITH ACTIVE BIAS
SPA1118ZSQ	RFMD	获取价格	850MHz 1WATT POWER AMPLIFIER WITH ACTIVE BIAS
SPA1118ZSR	RFMD	获取价格	850MHz 1WATT POWER AMPLIFIER WITH ACTIVE BIAS
SPA11A152KA5	KYOCERA AVX	获取价格	Array/Network Capacitor, 100V, C0G, 0.0015uF, Through Hole Mount, SIP-5, SIP
SPA11A152KA7	KYOCERA AVX	获取价格	Array/Network Capacitor, 100V, C0G, 0.0015uF, Through Hole Mount, SIP-7, SIP
SPA11C333KAA	KYOCERA AVX	获取价格	Array/Network Capacitor, 100V, X7R, 0.033uF, Through Hole Mount, SIP-10, SIP
SPA11C333MAA	KYOCERA AVX	获取价格	Array/Network Capacitor, 100V, X7R, 0.033uF, Through Hole Mount, SIP-10, SIP
SPA11C333ZA6	KYOCERA AVX	获取价格	Array/Network Capacitor, 100V, X7R, 0.033uF, Through Hole Mount, SIP-6, SIP
SPA11E104MA4	KYOCERA AVX	获取价格	Array/Network Capacitor, 100V, Z5U, 0.1uF, Through Hole Mount, SIP-4, SIP

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