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SPA07N65C3XKSA1 PDF预览

SPA07N65C3XKSA1

更新时间: 2024-11-29 21:21:51
品牌 Logo 应用领域
英飞凌 - INFINEON 局域网开关脉冲晶体管
页数 文件大小 规格书
15页 391K
描述
Power Field-Effect Transistor, 7.3A I(D), 650V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, FULLPAK-3

SPA07N65C3XKSA1 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete零件包装代码:TO-220AB
包装说明:FLANGE MOUNT, R-PSFM-T3针数:3
Reach Compliance Code:compliant风险等级:5.7
其他特性:AVALANCHE RATED雪崩能效等级(Eas):230 mJ
外壳连接:ISOLATED配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:650 V最大漏极电流 (ID):7.3 A
最大漏源导通电阻:0.6 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:TO-220ABJESD-30 代码:R-PSFM-T3
JESD-609代码:e3元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
最大脉冲漏极电流 (IDM):21.9 A认证状态:Not Qualified
表面贴装:NO端子面层:Tin (Sn)
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

SPA07N65C3XKSA1 数据手册

 浏览型号SPA07N65C3XKSA1的Datasheet PDF文件第2页浏览型号SPA07N65C3XKSA1的Datasheet PDF文件第3页浏览型号SPA07N65C3XKSA1的Datasheet PDF文件第4页浏览型号SPA07N65C3XKSA1的Datasheet PDF文件第5页浏览型号SPA07N65C3XKSA1的Datasheet PDF文件第6页浏览型号SPA07N65C3XKSA1的Datasheet PDF文件第7页 
SPP07N65C3, SPI07N65C3  
SPA07N65C3  
CoolMOS™ Power Transistor  
Feature  
New revolutionary high voltage technology  
Ultra low gate charge  
V
650  
0.6  
7.3  
V
Ω
A
DS  
R
DS(on)  
I
D
PG-TO220-3  
PG-TO262-3-1 PG-TO220  
Periodic avalanche rated  
Extreme dv/dt rated  
2
3
High peak current capability  
Improved transconductance  
2
3
2
1
1
P-TO220-3-31  
P-TO220-3-1  
PG-TO-220-3 : Fully isolated package (2500 VAC; 1 minute)  
Type  
Package  
Marking  
SPP07N65C3  
PG-TO220  
07N65C3  
07N65C3  
07N65C3  
SPI07N65C3  
SPA07N65C3  
PG-TO262-3  
PG-TO220-3  
Maximum Ratings  
Parameter  
Symbol  
Value  
Unit  
SPP_I  
SPA  
Continuous drain current  
I
A
D
1)  
T = 25 °C  
7.3  
4.6  
7.3  
C
1)  
T = 100 °C  
4.6  
C
Pulsed drain current,  
t
limited by  
T
I
D puls  
21.9  
230  
21.9  
230  
A
p
jmax  
Avalanche energy, single pulse  
E
mJ  
AS  
I =1.5A, V =50V  
DD  
D
2)  
jmax  
E
Avalanche energy, repetitive t limited by  
T
0.5  
0.5  
AR  
AR  
I =2.5A, V =50V  
DD  
D
Avalanche current, repetitive t limited by  
Gate source voltage  
T
I
AR  
2.5  
20  
30  
83  
2.5  
20  
30  
32  
A
V
AR  
jmax  
V
V
P
GS  
GS  
tot  
Gate source voltage AC (f >1Hz)  
Power dissipation, T = 25°C  
W
C
Operating and storage temperature  
T
,
T
stg  
-55...+150  
°C  
j
Page 1  
Rev. 1.92  
2010-12-21  

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