Datasheet > SPP07N60C3_07

SPP07N60C3_07

更新时间： 2024-11-15 06:13:27

品牌	Logo	应用领域
英飞凌 - INFINEON		栅极
页数	文件大小	规格书
15页	701K
描述
New revolutionary high voltage technology Ultra low gate charge

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中文翻译

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数据手册

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SPP07N60C3_07 数据手册

SPP07N60C3

SPI07N60C3, SPA07N60C3

Cool MOS™ Power Transistor

Feature

• New revolutionary high voltage technology

@ T

650

0.6

7.3

Ω

jmax

DS(on)

• Ultra low gate charge

PG-TO220FP PG-TO262

PG-TO220

• Periodic avalanche rated

• Extreme dv/dt rated

• High peak current capability

• Improved transconductance

P-TO220-3-31

P-TO220-3-1

• PG-TO-220-3-31;-3-111: Fully isolated package (2500 VAC; 1 minute)

Type

SPP07N60C3

Package

PG-TO220-3 Q67040-S4400

Ordering Code

Marking

07N60C3

SPI07N60C3

SPA07N60C3

PG-TO262

PG-TO220FP

Q67040-S4424

07N60C3

SP000216303

Maximum Ratings

Parameter

Symbol

Value

Unit

SPP_I

SPA

Continuous drain current

= 25 °C

7.3

4.6

7.3

4.6

= 100 °C

Pulsed drain current,

Avalanche energy, single pulse

limited by

uls

21.9

230

21.9

230

jmax

=5.5A,

=50V

Avalanche energy, repetitive

limited by

0.5

jmax

=7.3A,

=50V

Avalanche current, repetitive

Gate source voltage static

7.3

±20

7.3

±20

max

tot

Gate source voltage AC (f >1Hz)

Power dissipation, T = 25°C

Operating and storage temperature

Reverse diode dv/dt

dv/dt

-55...+150

°C

V/ns

Page 1

Rev. 3.1

2007-08-30

12 3 4 5 6 7...15

中文翻译

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