Datasheet > SPP06N60C3_07

SPP06N60C3_07

更新时间： 2024-11-15 06:13:27

品牌	Logo	应用领域
英飞凌 - INFINEON		晶体晶体管
页数	文件大小	规格书
11页	255K
描述
CoolMOSTM Power Transistor Features New revolutionary high voltage technology

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中文翻译

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SPP06N60C3_07 数据手册

SPP06N60C3

CoolMOS^TMPower Transistor

Features

Product Summary

_DS@ T _j,max

R _DS(on),max

I _D

650

0.75

6.2

Ω

• New revolutionary high voltage technology

• Ultra low gate charge

• Periodic avalanche rated

• High peak current capability

• Ultra low effective capacitances

• Extreme dv /dt rated

PG-TO220-3-1

• Improved transconductance

Type

Package

Ordering Code

Marking

SPP06N60C3

PG-TO220-3-1

Q67040-S4629

06N60C3

Maximum ratings, at T _j=25 °C, unless otherwise specified

Value

Parameter

Symbol Conditions

Unit

I _D

T _C=25 °C

T _C=100 °C

T _C=25 °C

6.2

3.9

Continuous drain current

Pulsed drain current¹⁾

I _D,pulse

E _AS

E _AR

I _AR

18.6

200

0.5

I _D=3.1 A, V _DD=50 V

I _D=6.2 A, V _DD=50 V

Avalanche energy, single pulse

Avalanche energy, repetitive t _AR

1),2)

6.2

Avalanche current, repetitive t _AR

Drain source voltage slope

Gate source voltage

I _D=6.2 A, V _DS=480 V,

T _j=125 °C

dv /dt

V/ns

V _GS

±20

±30

static

V _GS

AC (f >1 Hz)

T _C=25 °C

P _tot

Power dissipation

T _j, T _stg

-55 ... 150

Operating and storage temperature

°C

Rev. 1.3

page 1

2007-08-28

12 3 4 5 6 7...11

中文翻译

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