5秒后页面跳转
SPP06N80C3_07 PDF预览

SPP06N80C3_07

更新时间: 2024-11-15 06:13:27
品牌 Logo 应用领域
英飞凌 - INFINEON 晶体晶体管
页数 文件大小 规格书
13页 681K
描述
Cool MOS™ Power Transistor

SPP06N80C3_07 数据手册

 浏览型号SPP06N80C3_07的Datasheet PDF文件第2页浏览型号SPP06N80C3_07的Datasheet PDF文件第3页浏览型号SPP06N80C3_07的Datasheet PDF文件第4页浏览型号SPP06N80C3_07的Datasheet PDF文件第5页浏览型号SPP06N80C3_07的Datasheet PDF文件第6页浏览型号SPP06N80C3_07的Datasheet PDF文件第7页 
SPP06N80C3  
SPA06N80C3  
Cool MOS™ Power Transistor  
Feature  
New revolutionary high voltage technology  
Ultra low gate charge  
V
800  
0.9  
6
V
A
DS  
R
DS(on)  
I
D
PG-TO220-3-31 PG-TO220  
Periodic avalanche rated  
Extreme dv/dt rated  
3
Ultra low effective capacitances  
Improved transconductance  
PG-TO-220-3-31: Fully isolated package (2500 VAC; 1 minute)  
2
1
P-TO220-3-31  
Type  
Package  
Ordering Code  
Marking  
SPP06N80C3  
PG-TO220  
Q67040-S4351  
06N80C3  
SPA06N80C3  
PG-TO220-3-31 SP000216302  
06N80C3  
Maximum Ratings  
Parameter  
Symbol  
Value  
Unit  
SPP  
SPA  
Continuous drain current  
I
A
D
1)  
T = 25 °C  
6
3.8  
6
C
1)  
T = 100 °C  
3.8  
C
Pulsed drain current, t limited by T  
I
D puls  
18  
18  
A
p
jmax  
Avalanche energy, single pulse  
E
230  
230  
mJ  
AS  
I =1.2A, V =50V  
D
DD  
2)  
E
Avalanche energy, repetitive t limited by T  
0.2  
0.2  
AR  
AR  
jmax  
I =6A, V =50V  
D
DD  
Avalanche current, repetitive t limited by T  
Gate source voltage  
I
6
±20  
30  
6
±20  
30  
A
V
AR  
jmax  
AR  
V
V
P
GS  
GS  
tot  
Gate source voltage AC (f >1Hz)  
Power dissipation, T = 25°C  
83  
39  
W
C
Operating and storage temperature  
T
,
T
-55...+150  
°C  
j
stg  
Rev. 2.6  
Page 1  
2007-08-30  

与SPP06N80C3_07相关器件

型号 品牌 获取价格 描述 数据表
SPP06N80C3_08 INFINEON

获取价格

CoolMOSTM Power Transistor
SPP06N80C3XK INFINEON

获取价格

Power Field-Effect Transistor, 6A I(D), 800V, 0.9ohm, 1-Element, N-Channel, Silicon, Metal
SPP06N80C3XKSA1 INFINEON

获取价格

Power Field-Effect Transistor, 6A I(D), 800V, 0.9ohm, 1-Element, N-Channel, Silicon, Metal
SPP07N60C2 INFINEON

获取价格

Cool MOS⑩ Power Transistor
SPP07N60C3 INFINEON

获取价格

Cool MOS⑩ Power Transistor
SPP07N60C3_07 INFINEON

获取价格

New revolutionary high voltage technology Ultra low gate charge
SPP07N60C3_09 INFINEON

获取价格

New revolutionary high voltage technology Ultra low gate charge Extreme dv/dt rated
SPP07N60C3HKSA1 INFINEON

获取价格

Power Field-Effect Transistor, 7.3A I(D), 600V, 0.6ohm, 1-Element, N-Channel, Silicon, Met
SPP07N60CFD INFINEON

获取价格

CoolMOSTM Power Transistor Features Intrinsic fast-recovery body diode
SPP07N60CFDHKSA1 INFINEON

获取价格

Power Field-Effect Transistor, 6.6A I(D), 600V, 0.7ohm, 1-Element, N-Channel, Silicon, Met