Datasheet > 存储 > FIFO> SN74ALS232BN

SN74ALS232BN

更新时间： 2024-11-06 23:06:15

品牌	Logo	应用领域
德州仪器 - TI		存储内存集成电路光电二极管先进先出芯片时钟
页数	文件大小	规格书
8页	126K
描述
16 】 4 ASYNCHRONOUS FIRST-IN, FIRST-OUT MEMORY

阅读下载

中文翻译

获取价格

技术参数
数据手册
替代型号

如果您发现信息不准确，欢迎纠错

SN74ALS232BN 技术参数

是否无铅：	不含铅	是否Rohs认证：	符合
生命周期：	Active	零件包装代码：	DIP
包装说明：	DIP, DIP16,.3	针数：	16
Reach Compliance Code：	compliant	ECCN代码：	EAR99
HTS代码：	8542.32.00.71	Factory Lead Time：	1 week
风险等级：	5.74	Is Samacsys：	N
最长访问时间：	30 ns	最大时钟频率 (fCLK)：	40 MHz
周期时间：	25 ns	JESD-30 代码：	R-PDIP-T16
JESD-609代码：	e4	长度：	19.3 mm
内存密度：	64 bit	内存集成电路类型：	OTHER FIFO
内存宽度：	4	功能数量：	1
端子数量：	16	字数：	16 words
字数代码：	16	工作模式：	ASYNCHRONOUS
最高工作温度：	70 °C	最低工作温度：
组织：	16X4	输出特性：	3-STATE
可输出：	YES	封装主体材料：	PLASTIC/EPOXY
封装代码：	DIP	封装等效代码：	DIP16,.3
封装形状：	RECTANGULAR	封装形式：	IN-LINE
并行/串行：	PARALLEL	峰值回流温度（摄氏度）：	NOT SPECIFIED
电源：	5 V	认证状态：	Not Qualified
座面最大高度：	5.08 mm	子类别：	FIFOs
最大压摆率：	0.125 mA	最大供电电压 (Vsup)：	5.5 V
最小供电电压 (Vsup)：	4.5 V	标称供电电压 (Vsup)：	5 V
表面贴装：	NO	技术：	TTL
温度等级：	COMMERCIAL	端子面层：	Nickel/Palladium/Gold (Ni/Pd/Au)
端子形式：	THROUGH-HOLE	端子节距：	2.54 mm
端子位置：	DUAL	处于峰值回流温度下的最长时间：	NOT SPECIFIED
宽度：	6.35 mm	Base Number Matches：	1

SN74ALS232BN 数据手册

SN74ALS232B

16 × 4 ASYNCHRONOUS FIRST-IN, FIRST-OUT MEMORY

SCAS251B – FEBRUARY 1989 – REVISED APRIL 1998

DW OR N PACKAGE

Independent Asynchronous Inputs and

Outputs

(TOP VIEW)

16 Words by 4 Bits

Data Rates up to 40 MHz

Fall-Through Time 14 ns Typical

3-State Outputs

FULL

LDCK

GND

UNCK

EMPTY

Package Options Include Plastic

Small-Outline Package (DW), Plastic Chip

Carriers (FN), and Standard Plastic 300-mil

DIPs (N)

RST

description

FN PACKAGE

(TOP VIEW)

This 64-bit memory features high speed and fast

fall-through times. It is organized as 16 words by

4 bits.

A first-in, first-out (FIFO) memory is a storage

device that allows data to be written into and read

from its array at independent data rates. This

FIFO is designed to process data at rates up to

40 MHz in a bit-parallel format, word by word.

2 1 20 19

LDCK

EMPTY

Data is written into memory on a low-to-high

transition at the load-clock (LDCK) input and is

read out on a low-to-high transition at the

unload-clock (UNCK) input. The memory is full

when the number of words clocked in exceeds by

16 the number of words clocked out. When the

memory is full, LDCK signals have no effect on the

data residing in memory. When the memory is

empty, UNCK signals have no effect.

9 10 11 12 13

NC – No internal connection

Status of the FIFO memory is monitored by the FULL and EMPTY output flags. The FULL output is low when

the memory is full and high when it is not full. The EMPTY output is low when the memory is empty and high

when it is not empty.

A low level on the reset (RST) input resets the internal stack-control pointers and also sets EMPTY low and sets

FULL high. The Q outputs are not reset to any specific logic level. The first low-to-high transition on LDCK, after

either a RST pulse or from an empty condition, causes EMPTY to go high and the data to appear on the

Q outputs. It is important to note that the first word does not have to be unloaded. Data outputs are noninverting

with respect to the data inputs and are at high impedance when the output-enable (OE) input is low. OE does

not affect the FULL or EMPTY output flags. Cascading is easily accomplished in the word-width direction but

is not possible in the word-depth direction.

The SN74ALS232B is characterized for operation from 0°C to 70°C.

Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of

Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.

PRODUCTION DATA information is current as of publication date.

Products conform to specifications per the terms of Texas Instruments

standard warranty. Production processing does not necessarily include

testing of all parameters.

POST OFFICE BOX 655303 • DALLAS, TEXAS 75265

12 3 4 5 6 7 8

中文翻译

下载PDF

SN74ALS232BN 替代型号

型号	品牌	替代类型	描述	数据表
CD74HCT40105E	TI	类似代替	High Speed CMOS Logic 4-Bit x 16-Word FIFO Register
CD74HCT40105EE4	TI	类似代替	High-Speed CMOS Logic 4-Bit x 16-Word FIFO Register
CD74HC40105E	TI	功能相似	High Speed CMOS Logic 4-Bit x 16-Word FIFO Register

与SN74ALS232BN相关器件

型号	品牌	获取价格	描述	数据表
SN74ALS232N	TI	获取价格	IC,FIFO,16X4,ASYNCHRONOUS,ALS-TTL,DIP,16PIN,PLASTIC
SN74ALS233ADW3	TI	获取价格	IC IC,FIFO,16X5,ASYNCHRONOUS,ALS-TTL,SOP,20PIN,PLASTIC, FIFO
SN74ALS233B	TI	获取价格	16 】 5 ASYNCHRONOUS FIRST-IN, FIRST-OUT MEMOR
SN74ALS233B_16	TI	获取价格	ASYNCHRONOUS FIRST-IN, FIRST-OUT MEMORY
SN74ALS233BDW	TI	获取价格	16 】 5 ASYNCHRONOUS FIRST-IN, FIRST-OUT MEMOR
SN74ALS233BDWR	TI	获取价格	16 x 5 asynchronous FIFO memory 20-SOIC 0 to 70
SN74ALS233BFN	TI	获取价格	16 】 5 ASYNCHRONOUS FIRST-IN, FIRST-OUT MEMOR
SN74ALS233BFNR	TI	获取价格	暂无描述
SN74ALS233BN	TI	获取价格	16 】 5 ASYNCHRONOUS FIRST-IN, FIRST-OUT MEMOR
SN74ALS233FN	TI	获取价格	IC,FIFO,16X5,ASYNCHRONOUS,ALS-TTL,LDCC,20PIN,PLASTIC

与SN74ALS232BN相关文章

英伟达新AI芯片Rubin或提前半年亮相
2024-11-05

16
苹果iPhone 17将全系采用三星/LG显示LTPO OLED面板
2024-11-05

13
三星深化印度制造布局，供应链本地化进程加速
2024-10-29

37
芯擎科技“星辰一号”自动驾驶芯片点亮成功，2025年量产在即
2024-10-29

34

产品中心

服务支持

精选活动

关于我们

帮助中心

SN74ALS232BN

SN74ALS232BN 技术参数

SN74ALS232BN 数据手册

SN74ALS232BN 替代型号

与SN74ALS232BN相关器件

与SN74ALS232BN相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

SN74ALS232BN

SN74ALS232BN 技术参数

SN74ALS232BN 数据手册

SN74ALS232BN 替代型号

与SN74ALS232BN相关器件

与SN74ALS232BN相关文章

您还可以找

您在本页遇到什么问题？