5秒后页面跳转
捷配首页

Datasheet > 晶体管 > 小信号双极晶体管> SMUN5114T3G
SMUN5114T3G PDF预览

SMUN5114T3G

更新时间： 2024-09-17 11:01:35
品牌 Logo 应用领域
安森美 - ONSEMI 小信号双极晶体管
页数 文件大小 规格书
13页 108K
描述
PNP Bipolar Digital Transistor (BRT)

阅读下载

中文翻译

获取价格

SMUN5114T3G 数据手册

 浏览型号SMUN5114T3G的Datasheet PDF文件第2页浏览型号SMUN5114T3G的Datasheet PDF文件第3页浏览型号SMUN5114T3G的Datasheet PDF文件第4页浏览型号SMUN5114T3G的Datasheet PDF文件第5页浏览型号SMUN5114T3G的Datasheet PDF文件第6页浏览型号SMUN5114T3G的Datasheet PDF文件第7页 
DTA114EET1 Series  
Preferred Devices  
Bias Resistor Transistors  
PNP Silicon Surface Mount Transistors  
with Monolithic Bias Resistor Network  
This new series of digital transistors is designed to replace a single  
device and its external resistor bias network. The Bias Resistor  
Transistor (BRT) contains a single transistor with a monolithic bias  
network consisting of two resistors; a series base resistor and a  
base−emitter resistor. The BRT eliminates these individual  
components by integrating them into a single device. The use of a BRT  
can reduce both system cost and board space. The device is housed in  
the SC−75/SOT−416 package which is designed for low power  
surface mount applications.  
http://onsemi.com  
PNP SILICON BIAS  
RESISTOR TRANSISTORS  
PIN 3  
COLLECTOR  
(OUTPUT)  
PIN 1  
R1  
Features  
BASE  
(INPUT)  
R2  
• Simplifies Circuit Design  
• Reduces Board Space  
• Reduces Component Count  
PIN 2  
EMITTER  
(GROUND)  
• The SC−75/SOT−416 package can be soldered using wave or reflow.  
The modified gull−winged leads absorb thermal stress during  
soldering eliminating the possibility of damage to the die.  
• Pb−Free Packages are Available  
3
2
1
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
A
Rating  
Collector-Base Voltage  
Symbol  
Value  
50  
Unit  
Vdc  
SC−75 (SOT−416)  
CASE 463  
V
V
CBO  
CEO  
STYLE 1  
Collector-Emitter Voltage  
Collector Current  
50  
Vdc  
I
100  
mAdc  
C
MARKING DIAGRAM  
THERMAL CHARACTERISTICS  
Rating  
Symbol  
Value  
Unit  
Total Device Dissipation, FR−4 Board  
P
D
(Note 1) @ T = 25°C  
Derate above 25°C  
200  
1.6  
mW  
mW/°C  
A
xx M G  
G
Thermal Resistance, Junction−to−Ambient  
(Note 1)  
R
q
JA  
600  
°C/W  
Total Device Dissipation, FR−4 Board  
P
D
xx  
=
Specific Device Code  
xx = (Refer to page 2)  
Date Code*  
(Note 2) @ T = 25°C  
Derate above 25°C  
300  
2.4  
mW  
mW/°C  
A
M
G
=
=
Thermal Resistance, Junction−to−Ambient  
(Note 2)  
R
q
JA  
400  
°C/W  
Pb−Free Package  
(Note: Microdot may be in either location)  
Junction and Storage Temperature Range  
T , T  
−55 to  
+150  
°C  
*Date Code orientation may vary depending  
upon manufacturing location.  
J
stg  
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
1. FR−4 @ Minimum Pad.  
ORDERING INFORMATION  
See detailed ordering and shipping information in the package  
dimensions section on page 2 of this data sheet.  
2. FR−4 @ 1.0 × 1.0 Inch Pad.  
Preferred devices are recommended choices for future use  
and best overall value.  
©
Semiconductor Components Industries, LLC, 2006  
1
Publication Order Number:  
March, 2006 − Rev. 6  
DTA114EET1/D  
 
1234567...13

中文翻译

下载PDF

SMUN5114T3G 替代型号

型号 品牌 替代类型 描述 数据表
SMUN5114T1G ONSEMI

类似代替

 Digital Transistors (BRT) R1 = 10 k, R2 = 47 k

与SMUN5114T3G相关器件

型号 品牌 获取价格 描述 数据表
SMUN5115DW1T1G ONSEMI

获取价格

 		10kΩ, ∞ kΩ Dual PNP Bias Resistor Transistors
SMUN5115T1G ONSEMI

获取价格

 		Digital Transistors (BRT) R1 = 10 k, R2 =  k
SMUN5116DW1T1G ONSEMI

获取价格

 		Dual PNP Bias Resistor Transistors R1 = 4.7 kOhm, R2 =  kOhm
SMUN5131DW1T1G ONSEMI

获取价格

 		Dual PNP Bias Resistor Transistors R1 = 2.2 k, R2 = 2.2 k
SMUN5133T1G ONSEMI

获取价格

 		Digital Transistors (BRT) R1 = 4.7 k, R2 = 47 k
SMUN5211DW SECOS

获取价格

 		NPN Multi-Chip Built-in Resistors Transistor
SMUN5211DW1T1G ONSEMI

获取价格

 		Dual NPN Bias Resistor Transistors
SMUN5211T1G ONSEMI

获取价格

 		Digital Transistors (BRT) R1 = 10 k, R2 = 10 k
SMUN5211T3G ONSEMI

获取价格

 		Digital Transistors (BRT) R1 = 10 k, R2 = 10 k
SMUN5212DW SECOS

获取价格

 		NPN Multi-Chip Built-in Resistors Transistor

与SMUN5114T3G相关文章

您还可以找


热门产品
PCB打样/小批量
铝基板
BOM智能配单
PCBA制造
钣金
精密CNC
模具注塑
薄膜开关
精选活动
PCBA打样特惠
四六层板品质升级
铝基板品质升级
一体化电子制造
DFM下载
服务支持
企业认证
产品展示
工厂展示
工艺能力
积分商城
关于捷配
捷配简介
企业文化
公司动态
人才招聘
联系我们
帮助中心
下单流程
付款流程
开票流程
常见问题
全球PCB制造服务专线 400-613-0088

工作时间：9:00-21:00

CEO邮箱：ceo@jiepei.com

投诉邮箱：tousu@jiepei.com

捷配网-微信公众号 微信公众号
捷配网-微信公众号 抖音公众号
资质认证：
合作快递：
支付方式：
Copyright © 2024 Jiepei.com Inc. All Rights Reserved. 版权所有:杭州捷配信息科技有限公司 浙公网安备 33010502006866号 浙ICP备10014259号-119 营业执照ICP证