SMUN5115T1G

更新时间： 2024-11-21 12:22:47

品牌	Logo	应用领域
安森美 - ONSEMI		晶体小信号双极晶体管数字晶体管
页数	文件大小	规格书
12页	146K
描述
Digital Transistors (BRT) R1 = 10 k, R2 = k

阅读下载

中文翻译

获取价格

技术参数
数据手册

如果您发现信息不准确，欢迎纠错

SMUN5115T1G 技术参数

是否无铅：	不含铅	生命周期：	Active
针数：	3	Reach Compliance Code：	compliant
ECCN代码：	EAR99	Factory Lead Time：	4 weeks
风险等级：	5.71	Is Samacsys：	N
JESD-609代码：	e3	湿度敏感等级：	1
端子面层：	Tin (Sn)	Base Number Matches：	1

SMUN5115T1G 数据手册

MUN2115, MMUN2115L,

MUN5115, DTA114TE,

DTA114TM3, NSBA114TF3

Digital Transistors (BRT)

R1 = 10 kW, R2 = 8 kW

http://onsemi.com

PIN CONNECTIONS

PNP Transistors with Monolithic Bias

Resistor Network

PIN 3

COLLECTOR

(OUTPUT)

This series of digital transistors is designed to replace a single

device and its external resistor bias network. The Bias Resistor

Transistor (BRT) contains a single transistor with a monolithic bias

network consisting of two resistors; a series base resistor and a base−

emitter resistor. The BRT eliminates these individual components by

integrating them into a single device. The use of a BRT can reduce

both system cost and board space.

PIN 1

BASE

(INPUT)

PIN 2

EMITTER

(GROUND)

Features

MARKING DIAGRAMS

• Simplifies Circuit Design

• Reduces Board Space

SC−59

CASE 318D

STYLE 1

XX MG

• Reduces Component Count

• S and NSV Prefix for Automotive and Other Applications Requiring

Unique Site and Control Change Requirements; AEC-Q101 Qualified

and PPAP Capable

SOT−23

CASE 318

STYLE 6

XXX MG

• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

Compliant

MAXIMUM RATINGS (T = 25°C)

SC−70/SOT−323

CASE 419

Rating

Collector−Base Voltage

Collector−Emitter Voltage

Collector Current − Continuous

Input Forward Voltage

Symbol

Max

Unit

Vdc

XX MG

CBO

CEO

STYLE 3

Vdc

SC−75

CASE 463

STYLE 1

100

mAdc

Vdc

XX M

IN(fwd)

Input Reverse Voltage

Vdc

IN(rev)

SOT−723

CASE 631AA

STYLE 1

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

SOT−1123

CASE 524AA

STYLE 1

X M

XXX

Specific Device Code

Date Code*

Pb−Free Package

(Note: Microdot may be in either location)

*Date Code orientation may vary depending

upon manufacturing location.

ORDERING INFORMATION

See detailed ordering, marking, and shipping information in

the package dimensions section on page 2 of this data sheet.

Publication Order Number:

September, 2012 − Rev. 1

DTA114T/D

12 3 4 5 6 7...12

中文翻译

下载PDF

与SMUN5115T1G相关器件

型号	品牌	获取价格	描述	数据表
SMUN5116DW1T1G	ONSEMI	获取价格	Dual PNP Bias Resistor Transistors R1 = 4.7 kOhm, R2 = kOhm
SMUN5131DW1T1G	ONSEMI	获取价格	Dual PNP Bias Resistor Transistors R1 = 2.2 k, R2 = 2.2 k
SMUN5133T1G	ONSEMI	获取价格	Digital Transistors (BRT) R1 = 4.7 k, R2 = 47 k
SMUN5211DW	SECOS	获取价格	NPN Multi-Chip Built-in Resistors Transistor
SMUN5211DW1T1G	ONSEMI	获取价格	Dual NPN Bias Resistor Transistors
SMUN5211T1G	ONSEMI	获取价格	Digital Transistors (BRT) R1 = 10 k, R2 = 10 k
SMUN5211T3G	ONSEMI	获取价格	Digital Transistors (BRT) R1 = 10 k, R2 = 10 k
SMUN5212DW	SECOS	获取价格	NPN Multi-Chip Built-in Resistors Transistor
SMUN5212T1G	ONSEMI	获取价格	Digital Transistors (BRT) R1 = 22 k, R2 = 22 k
SMUN5213DW	SECOS	获取价格	NPN Multi-Chip Built-in Resistors Transistor

与SMUN5115T1G相关文章

解析光耦仿真器：升级光耦合器技术的必要性
2024-11-18

27
英伟达新一代Blackwell GPU过热问题致交付延迟
2024-11-18

19
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

49
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

47

产品中心

服务支持

精选活动

关于我们

帮助中心

SMUN5115T1G

SMUN5115T1G 技术参数

SMUN5115T1G 数据手册

与SMUN5115T1G相关器件

与SMUN5115T1G相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

SMUN5115T1G

SMUN5115T1G 技术参数

SMUN5115T1G 数据手册

与SMUN5115T1G相关器件

与SMUN5115T1G相关文章

您还可以找

您在本页遇到什么问题？