Datasheet > SMUN5214DW1T1G

SMUN5214DW1T1G

更新时间： 2024-09-16 12:32:03

品牌	Logo	应用领域
安森美 - ONSEMI		晶体晶体管
页数	文件大小	规格书
8页	156K
描述
Dual NPN Bias Resistor Transistors

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中文翻译

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数据手册

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SMUN5214DW1T1G 数据手册

MUN5214DW1,

NSBC114YDXV6,

NSBC114YDP6

Dual NPN Bias Resistor

Transistors

R1 = 10 kW, R2 = 47 kW

http://onsemi.com

PIN CONNECTIONS

(2)

NPN Transistors with Monolithic Bias

Resistor Network

(3)

(1)

This series of digital transistors is designed to replace a single

device and its external resistor bias network. The Bias Resistor

Transistor (BRT) contains a single transistor with a monolithic bias

network consisting of two resistors; a series base resistor and a

base-emitter resistor. The BRT eliminates these individual

components by integrating them into a single device. The use of a BRT

can reduce both system cost and board space.

Features

(4)

(5)

(6)

 Simplifies Circuit Design

 Reduces Board Space

 Reduces Component Count

MARKING DIAGRAMS

 S and NSV Prefix for Automotive and Other Applications

Requiring Unique Site and Control Change Requirements;

AEC-Q101 Qualified and PPAP Capable

 These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS

Compliant

SOT−363

CASE 419B

7D M G

MAXIMUM RATINGS

(T = 25C, common for Q and Q , unless otherwise noted)

SOT−563

CASE 463A

7D M G

Rating

Symbol

Max

Unit

Vdc

Collector-Base Voltage

Collector-Emitter Voltage

CBO

CEO

Vdc

Collector Current − Continuous

Input Forward Voltage

100

mAdc

Vdc

PMG

SOT−963

CASE 527AD

IN(fwd)

Input Reverse Voltage

Vdc

IN(rev)

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

7D/P

Specific Device Code

Date Code*

Pb-Free Package

(Note: Microdot may be in either location)

ORDERING INFORMATION

*Date Code orientation may vary depending

upon manufacturing location.

†

Device

Package

Shipping

MUN5214DW1T1G,

SMUN5214DW1T1G

SOT−363

3,000/Tape & Reel

NSBC114YDXV6T1G

NSVBC114YDXV6T1G

SOT−563

4,000/Tape & Reel

NSBC114YDXV6T5G

NSBC114YDP6T5G

SOT−563

SOT−963

8,000/Tape & Reel

†For information on tape and reel specifications, including part orientation and

tape sizes, please refer to our Tape and Reel Packaging Specifications

Brochure, BRD8011/D.

 Semiconductor Components Industries, LLC, 2012

Publication Order Number:

September, 2012 − Rev. 0

DTC114YD/D

12 3 4 5 6 7 8

中文翻译

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与SMUN5214DW1T1G相关器件

型号	品牌	获取价格	描述	数据表
SMUN5214T1G	ONSEMI	获取价格	Digital Transistors (BRT) R1 = 10 k, R2 = 47 k
SMUN5215DW	SECOS	获取价格	NPN Multi-Chip Built-in Resistors Transistor
SMUN5215T1G	ONSEMI	获取价格	Digital Transistors (BRT) R1 = 10 k, R2 = k
SMUN5216DW	SECOS	获取价格	NPN Multi-Chip Built-in Resistors Transistor
SMUN5230DW	SECOS	获取价格	NPN Multi-Chip Built-in Resistors Transistor
SMUN5230DW1T1G	ONSEMI	获取价格	双 NPN 双极数字晶体管 (BRT)
SMUN5231DW	SECOS	获取价格	NPN Multi-Chip Built-in Resistors Transistor
SMUN5231DW1T1G	ONSEMI	获取价格	双 NPN 偏置电阻晶体管 (BRT)
SMUN5232DW	SECOS	获取价格	NPN Multi-Chip Built-in Resistors Transistor
SMUN5232DW1T1G	ONSEMI	获取价格	双 NPN 双极数字晶体管 (BRT)

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